Vol 47, No 3 (2018)

This article studied the resistance of the negative electron resist based on hydrogen-silsesquioxane (HSQ) depending on the dose of exposure in the process of Reactive Ion Etching (RIE). These studies showed the strong dependence of resistance on irradiation dose (in case of full development of the e-beam resist) even after annealing the resist 30 minutes 400°C in air. Selectivity up to 14 was obtained in the process of reactive ion etching of silicon in a mixture of gases SF₆: C₄F₈. These results can be used to manufacturing of silicon nanoscale structures. It was shown that the resistance to wet etching in a 5% solution of hydrofluoric acid (HF) is also determined by irradiation dose. Additionally, taking into account the obtained results, silicon nanowires of width 10 nm with an aspect ratio of 1: 10 was manufactured.

The experimental-calculated methodology for evaluating the LSI sensitivity to the impact of single charged particles based on using laser radiation is proposed. The sensitivity of VLSI is determined by the results of scanning with the laser radiation of picosecond duration of the entire chip surface. The optical loss at the same points are evaluated by the measurement results of the ionization current under exposure to steady-state laser radiation.

Iron and nickel nanowires are grown by the matrix synthesis technique in the pores of the track membrane fabricated based on polyethylene terephthalate (PET). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to image the pores on the surface of the specimens and determine the 3d metal nanowires in a polymer bulk. The magnetization curves of the arrays of the nanowires are obtained. Magnetic properties of the nanowires are studied by the magnetic force microscopy (MFM) methods. The influence of the interposition and magnetostatic interaction of the nanowires of the magnetic metals in the polymer membrane, as well as the magnitudes and orientation of the applied external magnetic field, on the obtained MFM images is shown. The simulation results of the MFM images are in good agreement with the experimental data.

The conductivity of a thin metallic layer in an ac electric field is calculated with respect to different specular reflection coefficients of the layer surfaces for an ellipsoidal Fermi surface. The ratio between the free path of electron conduction and layer thickness is not limited. The dependences of the absolute value and the argument of dimensionless conductivity on the dimensionless layer’s thickness, dimensionless external electric field frequency, and specular reflection coefficient of one of the layer surfaces at different ellipticity parameters of the Fermi surface are analyzed.

In this paper, 0.18–0.5 μm SOI MOS transistors are tested for compliance with the reliability criteria applied to high-temperature electronics and their components. The main parameters of SOI MOS transistors are measured in the temperature range from −60 to +300°С. The specific behavior exhibited by SOI MOS transistors at high temperatures should be taken into account when designing high-temperature integrated circuits so as to avoid premature failures and increase the reliability of devices.