Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures

Abstract

In this paper, 0.18–0.5 μm SOI MOS transistors are tested for compliance with the reliability criteria applied to high-temperature electronics and their components. The main parameters of SOI MOS transistors are measured in the temperature range from −60 to +300°С. The specific behavior exhibited by SOI MOS transistors at high temperatures should be taken into account when designing high-temperature integrated circuits so as to avoid premature failures and increase the reliability of devices.