Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height
- Authors: Kerimov E.A.1, Kazymov N.F.2, Musaeva S.N.3
-
Affiliations:
- Space Research Institute of Natural Resources
- Institute of Ecology
- Azerbaijan Technical University
- Issue: Vol 47, No 2 (2018)
- Pages: 131-136
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186806
- DOI: https://doi.org/10.1134/S1063739718020063
- ID: 186806
Cite item
Abstract
The technology to obtain a silicide Pt/Ir mixture and Pt/Ir–Si photosensitive structures with a Schottky barrier in the middle IR area is developed. It is found that the main way to detect Pt/IrSi–р–Si structures is through the photoemission of Pt/IrSi holes into silicon. Moreover, the maximal photosensitivity is observed when the Pt/IrSi is not thicker than the free path length of the holes (less than 460 Å). The energy band diagram of the Schottky barrier structures based on the Pt/IrSi–Si contact is plotted. It is determined that the electron affinity of Pt/IrSi varies within 4.7–5.26 eV depending on the operational conditions of its formation.
About the authors
E. A. Kerimov
Space Research Institute of Natural Resources
Author for correspondence.
Email: E_Kerimov.fizik@mail.ru
Azerbaijan, Baku
N. F. Kazymov
Institute of Ecology
Email: E_Kerimov.fizik@mail.ru
Azerbaijan, Baku
S. N. Musaeva
Azerbaijan Technical University
Email: E_Kerimov.fizik@mail.ru
Azerbaijan, Baku