Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors

Abstract

The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al₂O₃ heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered.