Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors


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Аннотация

The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered.

Авторлар туралы

K. Kagirina

Institute of Ultrahigh Frequency Semiconductor Electronics

Хат алмасуға жауапты Автор.
Email: kagirina@gmail.com
Ресей, Moscow, 117105

Yu. Fedorov

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Ресей, Moscow, 117105

D. Lavrukhin

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Ресей, Moscow, 117105

S. Gamkrelidze

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Ресей, Moscow, 117105

D. Gnatyuk

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Ресей, Moscow, 117105

A. Zuev

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Ресей, Moscow, 117105

O. Ruban

Institute of Ultrahigh Frequency Semiconductor Electronics

Email: kagirina@gmail.com
Ресей, Moscow, 117105

D. Gromov

National Research Nuclear University “MEPhI,”

Email: kagirina@gmail.com
Ресей, Moscow, 115409

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