Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology
- Authors: Boruzdina A.B.1, Gerasimov Y.M.2, Grigor’ev N.G.2, Kobylyatskii A.V.2, Ulanova A.V.1, Shvetsov-Shilovskii I.I.1
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Affiliations:
- AO ENPO Specialized Electronic Systems
- National Research Nuclear University Moscow Engineering Physics Institute (MIFI)
- Issue: Vol 48, No 4 (2019)
- Pages: 268-272
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187162
- DOI: https://doi.org/10.1134/S1063739719030028
- ID: 187162
Cite item
Abstract
This article deals with a study of radiation-induced leakages between n-regions of various types using test structures fabricated according to the 0.18-µm CMOS technology. It is shown that, depending on the radiation exposure dose, the leakages between the n+-regions and the n-well may exceed the leakages between the n+-regions by 3–9 times, which should be taken into consideration when developing radiation resistant VSHICs.
Keywords
About the authors
A. B. Boruzdina
AO ENPO Specialized Electronic Systems
Author for correspondence.
Email: abbor@spels.ru
Russian Federation, Moscow, 115409
Yu. M. Gerasimov
National Research Nuclear University Moscow Engineering Physics Institute (MIFI)
Email: abbor@spels.ru
Russian Federation, Moscow, 115409
N. G. Grigor’ev
National Research Nuclear University Moscow Engineering Physics Institute (MIFI)
Email: abbor@spels.ru
Russian Federation, Moscow, 115409
A. V. Kobylyatskii
National Research Nuclear University Moscow Engineering Physics Institute (MIFI)
Email: abbor@spels.ru
Russian Federation, Moscow, 115409
A. V. Ulanova
AO ENPO Specialized Electronic Systems
Email: abbor@spels.ru
Russian Federation, Moscow, 115409
I. I. Shvetsov-Shilovskii
AO ENPO Specialized Electronic Systems
Email: abbor@spels.ru
Russian Federation, Moscow, 115409