Open Access Open Access  Restricted Access Access granted  Restricted Access Subscription Access

Vol 48, No 5 (2019)

Article

Study of the Effect of Technetium as a Component of the Catalysts of the REE Compounds on the Process of Decomposition of Monohydrides of Silicon and Germanium

Kovalevskiy A.A., Strogova A.S., Kusnetsov D.F., Voronets Y.S., Gran’ko S.V.

Abstract

The effect of technetium as a component of the catalysts of the REE compounds on the decomposition process of monohydrides of silicon and germanium during the growth of epitaxial films of silicon and a silicon-germanium solid solution is found. It is demonstrated that due to the fact that the unit cell radius of technetium is 1.358 Å and is similar to the unit cell radius of the platinum-group of elements (1.37–1.38 Å), as a component of the catalysts of REE compounds, it delivers the stability of the specific catalytic activity and high level of selectivity of the decomposition of monosilane and monogermane into \({\text{SiH}}_{2}^{{{\text{**}}}}\) and \({\text{GeH}}_{2}^{{{\text{**}}}}.\) This in turn allows carrying out the process of growing epitaxial films in two stages and, in this way, improving their quality.

Russian Microelectronics. 2019;48(5):273-282
pages 273-282 views

Single-Electron Transistor Based on a Linear Structure of Three Electrically and Optically Controlled Tunnel-Coupled Quantum Dots

Tsukanov A.V.

Abstract

A schematic diagram of a single-electron transistor with a sensitive element based on a resonant tunneling nanostructure consisting of three semiconductor quantum dots is discussed. The electron density in the steady (current) mode at the structure’s output is numerically calculated using a model of the incoherent electron transport between the extreme points and metallic reservoir contacts. The dependences of the electron density on time and system parameters are obtained. It is shown that there are sets of parameters that can provide high levels of sensitivity and reliability of the external electric field measurements. An alternative optically controlled transistor circuit is proposed, in which the electron transport through the structure is supported by a resonant laser field.

Russian Microelectronics. 2019;48(5):283-291
pages 283-291 views

Features of the Architecture Implementing the Dataflow Computational Model and Its Application in the Creation of Microelectronic High-Performance Computing Systems

Zmeev D.N., Klimov A.V., Levchenko N.N., Okunev A.S., Stempkovskii A.L.

Abstract

At present, high-performance computations are in general use: in the government sector, defense sphere, large-scale concerns and enterprises, commercial entities, etc. From year-to-year, increasing sums are invested in supercomputers and software to rapidly answer any challenges in some field. In general, present-day high-performance computing systems are based on the von Neumann computation model. This, in turn, imposes certain restrictions, in particular, on paralleling computations and, as a consequence, on the creation of effective parallel applications. In this paper, one of the ways of solving this problem is proposed, namely, transition to the original dataflow computation model with a dynamically generated context and its implementation in a parallel dataflow computing system. Peculiarities of the parallel dataflow computing system architecture and the advantages offered by them are described. Such architectures will be in demand when creating new microelectronic high-performance computation systems.

Russian Microelectronics. 2019;48(5):292-298
pages 292-298 views

Functional Properties and Frequency Characteristics of Low-Sensitive RC Filters Based on Micropower Operational Amplifiers

Denisenko D.Y., Prokopenko N.N., Ivanov Y.I.

Abstract

The main designs of low-sensitivity multiloop active RC filters (ARCFs) based on micropower operational amplifiers (OAs) for preliminary sensor signal processing in microelectronic measuring systems with analog-to-digital converters are discussed. Thirteen modifications of the integrators included in the active RC filter structure are presented and classified. The equations for their transfer functions, which take into account the effect of the integrator topology and the amplification area of micropower OAs, are obtained. As an example, the frequency responses of three universal low-sensitivity ARCF circuits for implementing bandpass, high-pass, and low-pass filters are compared. It is shown by computer simulation that the investigated ARCFs based on identical micropower OAs differ from each other in the effect of the amplification areas of the OAs on the implemented frequency responses.

Russian Microelectronics. 2019;48(5):299-309
pages 299-309 views

On the Construction of Neuromorphic Fault Dictionaries for Analog Integrated Circuits

Mosin S.G.

Abstract

Methods of machine learning are actively used to construct neuromorphic fault dictionaries that provide the fault diagnostics of analog and mixed-signal integrated circuits in an associative mode. Many problems of the neural network (NN) training associated with the large amount of input data can be solved by reducing the size of the training data sets and using only their significant characteristics. In this paper, a route for the formation of a neuromorphic fault dictionary (NFD) is presented, a method based on the calculation of the entropy for choosing the significant characteristics of the training set is proposed, and the corresponding algorithm is developed. The results of the experimental studies for analog filter are shown demonstrating high efficiency of the proposed method: reduction by a factor of 192 in the NN training time, and coverage up to 95.0% of catastrophic faults and up to 84.81% of parametric faults by the resulting NFD in the course of diagnostics.

Russian Microelectronics. 2019;48(5):310-317
pages 310-317 views

Formal Description of Digital Control System Operation and Its Use in Designing

Stempkovsky A.L., Ivannikov A.D.

Abstract

A model of the required external behavior of the designed digital system specified by the scheme of the digital block connection and software is introduced. It is proposed to use a family of time-invariant dynamical systems as such a model; the family is specified by a set of terminal variables, the range of values of these variables, and the set of admissible interactions between the digital system and external medium. It is assumed that the designed digital system must provide the performance of a finite alphabet of functions each of which is characterized by its subset of admissible interactions. Based on this, the structure of the set of admissible interactions of the digital system is analyzed. The project of a correctly designed digital system also defines a family of time-invariant dynamical systems as an external behavior. The problem of debugging projects for digital systems is stated as a problem of comparing two families of time-invariant dynamical systems: on the one hand, the family specified by the requirements of the technical design assignment and, on the other hand, the family determined by the scheme of block connection and text of the digital system’s software.

Russian Microelectronics. 2019;48(5):318-325
pages 318-325 views

Design of a Thin-Film Thermoelectric Generator for Low-Power Applications

Korotkov A.S., Loboda V.V., Dzyubanenko S.V., Bakulin E.M.

Abstract

The results of designing a thermoelectric generator (TEG) for low-power applications, such as human monitoring systems, are presented. The generator principle is based on using the Seebeck effect. We describe a manufacturing process and the results of testing a thin-film TEG with an output power of 3–56 μW and a temperature difference of 25–100 K.

Russian Microelectronics. 2019;48(5):326-334
pages 326-334 views

A New Voltage Level Shifter For Low-Power Applications

Shubin V.V.

Abstract

A new voltage level shifter (NVLS) for low-power applications is presented. Moreover, the original method of forming a circuit with low conductivity used in the NVLS to increase speed and reduce dynamic current consumption is described. The simulation results demonstrate that the switching time delay of the NVLS is reduced by at least 30%. Compared to traditional circuits, the proposed voltage level shifter operates steadily over a wider range of working voltages.

Russian Microelectronics. 2019;48(5):335-339
pages 335-339 views

Automation of Pulse Electric Strength Test of Electronic Component Base

Dyatlov N.S., Epifantsev K.A., Skorobogatov P.K.

Abstract

During the pulse electric strength test of the electronic component base (ECB), the single pulsing electrical overstress (EOS) of increasing amplitude affects the tested specimen until a functional or parametric failure of the product appears. In order to reduce the test time and minimize operator intervention, a specialized test bench was designed to perform the test in automatic mode. To have the possibility to switch the specimen between a sensitive measuring instrument and a high-voltage pulse generator, a mechanical switching device was developed, which also operates as a connecting link between test bench components. After putting the test bench into operation, the time of preparation and the test significantly decreases. Furthermore, it became possible to test the electronic component base on the multiple actions of voltage pulses.

Russian Microelectronics. 2019;48(5):340-345
pages 340-345 views

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies