Email this article Microconsuming 8–12 GHz GaN Power Amplifiers
- Authors: Gamkrelidze S.A.1, Gnatyuk D.L.1, Zuev A.V.1, Maitama M.V.1, Mal’tsev P.P.1, Mikhalev A.O.1, Fedorov Y.V.1
-
Affiliations:
- Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
- Issue: Vol 48, No 4 (2019)
- Pages: 262-267
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187159
- DOI: https://doi.org/10.1134/S106373971904005X
- ID: 187159
Cite item
Open Access
Access granted
Subscription Access
Abstract
This paper describes a cascade circuit of a gallium nitride (GaN) power amplifier whose chip area is smaller by factors of 4 to 6 than that of traditional amplifiers on silicon carbide (SiC) substrates. It enables an output power of up to 3 W at 8–12 GHz for microconsuming power amplifiers in robotics and spacecraft applications.
About the authors
S. A. Gamkrelidze
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Author for correspondence.
Email: Iuhfseras2010@yandex.ru
Russian Federation, Moscow, 117105
D. L. Gnatyuk
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Russian Federation, Moscow, 117105
A. V. Zuev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Russian Federation, Moscow, 117105
M. V. Maitama
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Russian Federation, Moscow, 117105
P. P. Mal’tsev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Russian Federation, Moscow, 117105
A. O. Mikhalev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Author for correspondence.
Email: m2lkeny@yandex.ru
Russian Federation, Moscow, 117105
Yu. V. Fedorov
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Russian Federation, Moscow, 117105
