Email this article Development of magnetic semiconductor microsystems technology
- Authors: Amelichev V.V.1,2, Abanin I.E.1, Aravin V.V.3, Kostyuk D.V.1,2, Kasatkin S.I.4, Reznev A.A.3, Saurov A.N.1,5
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Affiliations:
- State Research and Development Center of Russian Federation “Technological Center” MIET
- National Research University of Electronic Technology MIET
- Troops Unit 68240
- Trapeznikov Institute of Control Sciences
- Institute of Nanotechnology of Microelectronics
- Issue: Vol 45, No 7 (2016)
- Pages: 528-531
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186007
- DOI: https://doi.org/10.1134/S1063739716070015
- ID: 186007
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Abstract
The results of the development of technologies of magnetic semiconductor chips based on thinfilm magnetoresistive multilayer structures are presented. A brief overview of the main achievements in the field of magnetometric devices based on anisotropic and giant magnetoresistive effects is made.
About the authors
V. V. Amelichev
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
Author for correspondence.
Email: V.Amelichev@tcen.ru
Russian Federation, Moscow, 124498; Moscow, 124498
I. E. Abanin
State Research and Development Center of Russian Federation “Technological Center” MIET
Email: V.Amelichev@tcen.ru
Russian Federation, Moscow, 124498
V. V. Aravin
Troops Unit 68240
Email: V.Amelichev@tcen.ru
Russian Federation, Moscow
D. V. Kostyuk
State Research and Development Center of Russian Federation “Technological Center” MIET; National Research University of Electronic Technology MIET
Email: V.Amelichev@tcen.ru
Russian Federation, Moscow, 124498; Moscow, 124498
S. I. Kasatkin
Trapeznikov Institute of Control Sciences
Email: V.Amelichev@tcen.ru
Russian Federation, Moscow, 117997
A. A. Reznev
Troops Unit 68240
Email: V.Amelichev@tcen.ru
Russian Federation, Moscow
A. N. Saurov
State Research and Development Center of Russian Federation “Technological Center” MIET; Institute of Nanotechnology of Microelectronics
Email: V.Amelichev@tcen.ru
Russian Federation, Moscow, 124498; Moscow, 119991
