Power switching transistors based on gallium nitride epitaxial heterostructures
- Authors: Erofeev E.V.1, Fedin I.V.2, Yurjev Y.N.3
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Affiliations:
- Research Institute of Electrical Communication Systems
- Joint-Stock Research and Production Company Mikran
- Physical Technical Institute
- Issue: Vol 46, No 3 (2017)
- Pages: 205-210
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186372
- DOI: https://doi.org/10.1134/S1063739717020020
- ID: 186372
Cite item
Abstract
The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.
About the authors
E. V. Erofeev
Research Institute of Electrical Communication Systems
Author for correspondence.
Email: erofeev@micran.ru
Russian Federation, Tomsk, 634034
I. V. Fedin
Joint-Stock Research and Production Company Mikran
Email: erofeev@micran.ru
Russian Federation, Tomsk, 634045
Y. N. Yurjev
Physical Technical Institute
Email: erofeev@micran.ru
Russian Federation, Tomsk, 634050