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Том 45, № 4 (2016)
- Год: 2016
- Статей: 9
- URL: https://journals.rcsi.science/1063-7397/issue/view/11609
Article
Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology
Аннотация
The physical and chemical foundations of the atomic layer deposition (ALD) process, the advantages of ALD technology, and possible applications for further miniaturizing and improving the performance of semiconductor devices are considered. The results of the atomic layer deposition of the advanced nanoelectronic material hafnium oxide are discussed. The dielectric characteristics’ measurements and microstructure analysis results are given.
229-236
Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors
Аннотация
A two-stage optimization technique for the parameters of SOI-MOS structures is proposed based on the correction of the pocket formation modes of an active structure. As a result of the use of this technique, the threshold voltage of the bottom (parasitic) transistor doubles, while maintaining the values of the parameters of the upper (main) transistor. The experimental investigations confirmed the effectiveness of using this optimization technique when doping the pockets of a SOI-MOS structure to provide the radiation hardness to the accumulated dose.
237-241
Secondary ion mass spectrometry study of the formation of a nanometer oxide film on a titanium nitride surface
Аннотация
Using secondary ion mass spectrometry, we investigate the oxidation of titanium nitride films fabricated by reactive magnetron sputtering under specific conditions of burning plasma in the argon and oxygen mixture in a vacuum chamber of a magnetron sputtering facility at annealing temperatures ranging from 350 to 440°С and times ranging from 2 to 11 min. It is shown that the oxidation is activated by the plasma, while thermal activation plays a secondary role. The oxide layer consists of the TiO2 layer and (3–5)-nm-thick intermediate layer between it and the bulk of titanium nitride, which is homogeneous over the sample surface and enriched with oxygen-containing complexes. The titanium dioxide layer thickness lies within 2–3.5 nm and depends on the annealing conditions. The effect of different factors on the layer thicknesses is investigated. The expression is obtained that satisfactorily describes the dependence of the TiO2 layer thickness on annealing temperature and time.
242-255
Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces after treatment with SHF plasma
Аннотация
Relaxation modification of the nanomorphology of atomically clean surfaces of silicon (100) crystals with different conductivity types, obtained using low-energy low-pressure SHF plasma, was studied. The influence of the chemical activity of the working gases used on the character and kinetics of postprocess changes in the nanomorhpology was revealed. It was shown that the type of the kinetic dependences is defined by the semiconductor type; the minimal surface energy and a better quality of the interface structure appear after the low-energy SHF plasma treatment in an argon atmosphere.
256-261
Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition
Аннотация
The structural and electrical properties of materials based on hafnium oxide grown by atomic layer deposition (ALD) are analyzed. The possibility and prospects of the use of their nanoscale films in nonvolatile memory are considered. The possibility of scaling Ferroelectric random access memory (FRAM) to subμm dimensions while preserving the ferroelectric properties is shown.
262-269
Characteristics of the kinetics of periodic structures CMP for a nonlinear pressure dependence of the polishing rate
Аннотация
For the kinetics of the chemical mechanical polishing (CMP) of wafers containing periodic metal–dielectric structures, a model is developed and theoretically investigated with the use of contact mechanics methods for the nonlinear pressure dependences of the polishing rate. In the steady-state regime, expressions for the dishing effect, which is characterized by the difference in the depths of the polishing metal and dielectric strips, are analytically derived and investigated. The specific characteristics of this effect, which are observed for different kinds of nonlinearities of the polishing rate depending on the pressure and the relative rotation velocity of the pad and wafer, are analyzed. Particularly, it is shown that, under certain conditions, the steady-state regime may be nonunique (the bistability effect).
270-277
Kinetics of neutral particles in HCl and HBr plasmas at low pressures and high electron concentrations
Аннотация
The kinetics of the creation and annihilation of neutral particles in HCl and HBr plasmas under the conditions of standard industrial etching reactors is simulated. It is established that the two systems have similar kinetic schemes and exhibit only quantitative differences in plasma compositions. It is show that the HBr plasma is characterized by higher degrees of dissociation of the initial molecules and bromine atomic concentrations in the same temperature and electron concentration ranges.
278-284
Thin film negative electrode based on silicon composite for lithium-ion batteries
Аннотация
The experimental results concerning the elaboration of the technology used to manufacture thin film negative electrodes for lithium-ion batteries based on Si–O–Al–Zn composites have been presented. The regimes of sputtering and the possibilities of controlling the structure and phase composition of the films, the methods used for the diagnostics of the structure and phase composition of the films, and the results of the electrochemical tests of the negative electrodes have been described.
285-291
A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles
Аннотация
This study is devoted to the development of a method for the registration of multiple-cell upsets (MCUs) in memory cells induced by single nuclear particles. The presented results illustrate the possibility of finding MCUs in high capacity (higher than 1 Mbit) memory cells using the improved method.
292-297