Vol 46, No 3 (2017)

The methods of functional-logic simulation of radiation-induced failures of electronic systems based on the Brauer fuzzy state machine model are presented. Recommendations for methods of radiationinduced failure prediction in the electronic component base are given. Theoretical and experimental results for the radiation fault tolerance of 1617 large-scale integrated circuits based on complementary metal–oxide–semiconductor structures are given as an example.

Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry.

Reversible and stable bistable resistive switching were observed in planar-type junctions Nd_2–xCe_xCuO_4–y/Nd_2–xCe_xO_1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd_2–xCe_xO_1.75, deficient in oxygen, epitaxially germinated at the Nd_2–xCe_xCuO_4–y surface.

The possibilities of developing a projection-capacitance touchscreen which aligns sensors and an analog-digital converter produced from the material based on graphene have been considered. The alignment of these two elements will make it possible to implement a touchscreen with digital signals at the output contacts which will make it possible to connect it to the integrated logical circuits of the control system. The touchscreen is a film with a thickness of 100–150 micrometers with alternating graphene layers, which transmit 6–8% more light than a projection-capacitance screen from indium and stanum oxides. The screen is highly flexible, is mechanically hard, and the materials—saccharose, copper foil, boron nitride (BN), etc.—used to fabricate it potentially cost less. This is achieved by the application of a complex of the known methods used to obtain films from two-dimensional materials based on graphene of a preset configuration on flexible polymer substrates and a single construction of the system for electrical capacitance accumulation in a touchscreen and analog-digital conversion on graphene field-effect transistors.

The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage V_th = +1.2 V and a maximum drain-source current I_ds = 0.15 A/mm at the drain-source voltage V_ds = +8 V. The drain-source breakdown voltage in the closed state is V_b = 300 V at the drain-source distance L_ds = 8.5 μm and drain-source voltage V_ds = 0 V.

This paper proposes a circuit model for injection lasers with functionally integrated optical-radiation modulators. This model takes into account the design and structural features of the functionally-integrated injection laser modulators (FIILMs), as well as the effect exerted by the spatial distributions of electrons, holes, and photons in the FIILMs’ active region on the behavior of the physical processes there.