Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors

Abstract

The influence of the topological parameters of shunts in the cathode regions of a photothyristor on the dV/dt effect is calculated. The analytical condition that makes it possible to determine, in the first approximation, the region of the onset of the structure triggering caused by the dV/dt effect is obtained. When the forward voltage increases on the thyristor structure in the off state, the bias current flowing through the barrier capacitance of the inversely biased p-base-n-base junction causes a spontaneous triggering of the structure. This is the core of the dV/dt effect in thyristors.