Email this article Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2
- Authors: Orlov O.M.1, Islamov D.R.2,3, Chernikova A.G.4, Kozodaev M.G.4, Markeev A.M.4, Perevalov T.V.2,3, Gritsenko V.A.2,3, Krasnikov G.Y.1,5
-
Affiliations:
- JSC Research Institute of Molecular Electronics (NIIME)
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Moskow Institute of Physics and Technology
- Public JSC Research Institute of Molecular Electronics and Micron
- Issue: Vol 45, No 5 (2016)
- Pages: 350-356
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185764
- DOI: https://doi.org/10.1134/S1063739716050061
- ID: 185764
Cite item
Open Access
Access granted
Subscription Access
Abstract
The mechanism responsible for the charge transport in thin ferroelectric Hf0.5Zr0.5O2 films has been studied. It is shown that in these films the transport mechanism is phonon-assisted tunneling between the traps. The optimal thickness of dielectric film for TiN/Hf0.5Zr0.5O2/Pt structures is determined. As a result of comparing the experimental current–voltage (I–V) characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones, the thermal and optical energies of the traps are determined and the concentration of the traps is estimated. A comparison between the transport properties of ferroelectric and amorphous Hf0.5Zr0.5O2 films is carried out. It is shown that the charge transport mechanism in this dielectric does not depend on its crystalline phase. A method for decreasing leakage currents in Hf0.5Zr0.5O2 is proposed. A study of the resource of repolarization cycles for TiN/Hf0.5Zr0.5O2/TiN metal-dielectric-metal (MDM) structures fully grown by atomic layer deposition (ALD) has been carried out.
About the authors
O. M. Orlov
JSC Research Institute of Molecular Electronics (NIIME)
Author for correspondence.
Email: oorlov@mikron.ru
Russian Federation, Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast, 124460
D. R. Islamov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: oorlov@mikron.ru
Russian Federation, pr. Akad. Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. G. Chernikova
Moskow Institute of Physics and Technology
Email: oorlov@mikron.ru
Russian Federation, Institutskii per. 9, Dolgoprudny, Moscow oblast, 141700
M. G. Kozodaev
Moskow Institute of Physics and Technology
Email: oorlov@mikron.ru
Russian Federation, Institutskii per. 9, Dolgoprudny, Moscow oblast, 141700
A. M. Markeev
Moskow Institute of Physics and Technology
Email: oorlov@mikron.ru
Russian Federation, Institutskii per. 9, Dolgoprudny, Moscow oblast, 141700
T. V. Perevalov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: oorlov@mikron.ru
Russian Federation, pr. Akad. Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
V. A. Gritsenko
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: oorlov@mikron.ru
Russian Federation, pr. Akad. Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
G. Ya. Krasnikov
JSC Research Institute of Molecular Electronics (NIIME); Public JSC Research Institute of Molecular Electronics and Micron
Email: oorlov@mikron.ru
Russian Federation, Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast, 124460; Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast, 124460
