Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods


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Several experimental methods for controlling the quality of the multilayer film structures used for the fabrication of magnetic tunneling junctions (MTJs) are considered. A multilayer magnetoresistive structure of the following composition is deposited using magnetron sputtering on a Singulus Timaris cluster tool: Ta/CuN/Ta/NiFe/IrMn/CoFe/Ru/CoFeB/MgO/CoFeB/Ta/Ru. A layer-by-layer elemental analysis of the composition of the deposited structure is carried out by the time of flight (TOF) secondary ion mass-spectrometry on a TOF.SIMS 5 installation. A cross section of the structure is analyzed using transmission electron microscopy (TEM) (Tecnai G2 F20 U-TWIN). The crystal structure of the layers is characterized using X-ray diffraction. A comparison of the data obtained using different analytical methods lets us estimate the accuracy of the analysis and the quality of the structure intended for further MTJ fabrication.

作者简介

O. Trushin

Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences

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Email: otrushin@gmail.com
俄罗斯联邦, Yaroslavl

S. Simakin

Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences

Email: otrushin@gmail.com
俄罗斯联邦, Yaroslavl

S. Vasiliev

Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences

Email: otrushin@gmail.com
俄罗斯联邦, Yaroslavl

E. Smirnov

Crocus Nanoelectronics

Email: otrushin@gmail.com
俄罗斯联邦, Moscow, 109316

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