A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles


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Resumo

This study is devoted to the development of a method for the registration of multiple-cell upsets (MCUs) in memory cells induced by single nuclear particles. The presented results illustrate the possibility of finding MCUs in high capacity (higher than 1 Mbit) memory cells using the improved method.

Sobre autores

A. Boruzdina

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Autor responsável pela correspondência
Email: abbor@spels.ru
Rússia, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. Ulanova

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Rússia, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. Chumakov

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Rússia, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. Yanenko

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Rússia, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

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