A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles


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Abstract

This study is devoted to the development of a method for the registration of multiple-cell upsets (MCUs) in memory cells induced by single nuclear particles. The presented results illustrate the possibility of finding MCUs in high capacity (higher than 1 Mbit) memory cells using the improved method.

About the authors

A. B. Boruzdina

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Author for correspondence.
Email: abbor@spels.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. V. Ulanova

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. I. Chumakov

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. V. Yanenko

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409


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