Vol 45, No 5 (2016)

The new correlation data analysis method based on the complements of classical probability distribution to quantum state and Schmidt decomposition is presented. It is shown that mathematical methods of quantum mechanics allow us to develop new effective tools for the analysis of statistical dependences and relationships. The presented formalism is the natural approach for the analysis of both classical and quantum correlations. Algorithms of the calculation of partial and multiple correlation coefficients using Schmidt numbers were studied. Numerical estimates of these correlation coefficients were calculated for different probability distributions and quantum states.

In order to form a topology on a semiconductor surface, a halogen-containing plasma is often used; therefore, the spectral control of the etching process is a topical technology in the modern electronics. In this work we have studied the radiation spectra of plasma-forming gases consisting of mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconductor plate of gallium arsenide. The lines and bands have been chosen for the spectral control of the rate of the etching process by the radiation intensity of the lines and bands of the etching products. It is shown that a connection between the radiation intensity of the products of GaAs etching and the rate of etching in the plasma of the mixtures of hydrogen chloride with argon and chlorine is described by a directly proportional dependence, which indicates the possibility of real-time control of the etching process by the spectral method.

Halogen-containing plasma, particularly, freons, is often used to form topologies on the surface of semiconductors. This paper investigates the kinetics of the interaction between the R-12 freon and the surface of a semiconductor structure. The R-12 freon is effective for etching semiconductors, particularly, gallium arsenide, as it provides sufficient rates of interaction while preserving a uniform and clean surface. In this work, the surface of the samples is inspected with a Solver P47Pro atomic-force microscope.

In the case of an inhomogeneous time-periodic electric field E, the electrical current distribution is evaluated for a thin metal layer with different reflection coefficients q₁ and q₂ of its surfaces. The dependence of the conductive function Σ on the frequency of the external inhomogeneous time-periodic electric field and on the coefficient of the inhomogeneous field κ is analyzed. The relaxation time approximation to the kinetic Boltzmann equation for electron transport is used.