Vol 47, No 5 (2018)

We study the possibility of implementing a two-qubit controlled-NOT gate operation in a structure consisting of two semiconductor double quantum dots placed in a high-Q optical microcavity and governed by a resonant laser field. The effect of relaxation processes on the dynamics of the two-electron system is discussed. The dissipation rates allowing quantum error correction algorithms to be used are determined. The existing additional excitation channel (laser pulse) is shown to weaken the effect of the nonideality of the cavity on the evolution of the states. Optimal electron coupling coefficients in the quantum dots with control fields are fitted, in which the controlled qubit is switched with the highest probability and the gate implementation takes several hundreds of picoseconds.

The work is devoted to studying a capacitor array of sensor and contactless identifier entry devices of the capacitive type on the example of sensory devices made from composite silver-containing materials on a ceramic substrate. The theoretical investigations involve calculations of the topology of the capacitor arrays, in particular, improved dimensions of the segments (3.5 × 3.5 mm) and the arrangement of array layers with the aim of more exactly recognizing input objects, reducing the malfunction of the controller, and increasing the electromagnetic pickup tolerance. In addition to searching for the dimensional parameters, the electrophysical parameters of the capacitive panel under study, namely, voltage, capacitance of 1.8 nF in the case of a matrix with square segments and 2.3 nF in the case of a matrix with round segments, and the charge before and after approaching the input objects (6 and 7 nC, respectively), are measured and calculated. Experimental investigations of the capacitor arrays are carried out, according to which it is determined that a round shape of the segments is preferable in order to increase the linearity of the dependence of the distance of the input objects from the centers of the sensor segments. It is also more effective to locate the integrated plate of a capacitor array from the bottom rather than the top. In this case, the set of holes in the array layers becomes unnecessary. The results of the calculations of the dimensional and electrophysical parameters and their experimental measurements help in the design of topologies of the arrays of the sensor elements of capacitive touch panels from materials which are an alternative to indium and tin oxides (ITOs) (silver nanowires, graphene, polymers, foil, silver-containing organic composites, etc.), as well as in the design of ADT diagrams and controllers for them.

In this paper, we estimate the basic parameters of 0.18-μm SOI MOS transistors in the temperature range from –60 to 300°С and investigate their reliability at high temperatures. The specific characteristics of SOI MOS transistors that manifest themselves at high temperatures should be taken into account when designing high-temperature integrated circuits in order to avoid their premature failures and improve the reliability of electronic devices.

A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed.

To produce heavily doped epitaxial layers, amorphous Ge:Sb films with a thickness of 150 and 300 nm are vacuum-deposited on Ge substrates and are exposed to pulsed nanosecond irradiation of high-power laser (λ = 0.69 μm) or ion (C⁺ or H⁺) beams. In the course of laser processing, the irradiated region is optically probed with the registration of the reflection of the probe beam R(t) to control the aggregate state of the film. As a result of rapid crystallization, polycrystalline or epitaxial Ge:Sb layers of different thicknesses are formed from the melt. Computer simulation of the heating and phase transitions of an amorphous Ge film on a crystalline Ge substrate is carried out, as well as the diffusive redistribution of the impurity (Sb) under pulsed treatments. We showed that, due to the volumetric release of the energy of ion beams, it is possible to control the distribution of the Sb impurity up to a depth of 1.5 μm. The simulation results are in good agreement with the experiment.