Email this article Multilayer graphene-based flash memory
- Authors: Novikov Y.N.1, Gritsenko V.A.1,2, Krasnikov G.Y.3, Orlov O.M.3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University, Novosibirsk
- Scientific Research Institute of Molecular Electronics
- Issue: Vol 45, No 1 (2016)
- Pages: 63-67
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185499
- DOI: https://doi.org/10.1134/S1063739715060050
- ID: 185499
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Abstract
For the memory element based on a Si/HfO2/multilayer graphene/SiO2/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices.
About the authors
Yu. N. Novikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: nov@isp.nsc.ru
Russian Federation, Moscow
V. A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University, Novosibirsk
Email: nov@isp.nsc.ru
Russian Federation, Moscow; Moscow
G. Ya. Krasnikov
Scientific Research Institute of Molecular Electronics
Email: nov@isp.nsc.ru
Russian Federation, Moscow
O. M. Orlov
Scientific Research Institute of Molecular Electronics
Email: nov@isp.nsc.ru
Russian Federation, Moscow
