Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition
- Authors: Orlov O.M.1,2, Markeev A.M.3, Zenkevich A.V.3, Chernikova A.G.3, Spiridonov M.V.3, Izmaylov R.A.3,2, Gornev E.S.1,2
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Affiliations:
- JSC Mikron
- SC Molecular Electronics Research Institute
- Moscow Institute of Physics and Technology
- Issue: Vol 45, No 4 (2016)
- Pages: 262-269
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185689
- DOI: https://doi.org/10.1134/S1063739716040077
- ID: 185689
Cite item
Abstract
The structural and electrical properties of materials based on hafnium oxide grown by atomic layer deposition (ALD) are analyzed. The possibility and prospects of the use of their nanoscale films in nonvolatile memory are considered. The possibility of scaling Ferroelectric random access memory (FRAM) to subμm dimensions while preserving the ferroelectric properties is shown.
About the authors
O. M. Orlov
JSC Mikron; SC Molecular Electronics Research Institute
Author for correspondence.
Email: oorlov@mikron.ru
Russian Federation, Zelenograd; Zelenograd
A. M. Markeev
Moscow Institute of Physics and Technology
Email: oorlov@mikron.ru
Russian Federation, Moscow
A. V. Zenkevich
Moscow Institute of Physics and Technology
Email: oorlov@mikron.ru
Russian Federation, Moscow
A. G. Chernikova
Moscow Institute of Physics and Technology
Email: oorlov@mikron.ru
Russian Federation, Moscow
M. V. Spiridonov
Moscow Institute of Physics and Technology
Email: oorlov@mikron.ru
Russian Federation, Moscow
R. A. Izmaylov
Moscow Institute of Physics and Technology; SC Molecular Electronics Research Institute
Email: oorlov@mikron.ru
Russian Federation, Moscow; Zelenograd
E. S. Gornev
JSC Mikron; SC Molecular Electronics Research Institute
Email: oorlov@mikron.ru
Russian Federation, Zelenograd; Zelenograd