Vol 45, No 6 (2016)

The technique for fabricating microcavities from diamond and other materials is described and their main parameters are reported. The possibilities of using color centers in diamond which interact with optical cavities as single-phonon sources and in quantum information processing are discussed. Several variants of integration of the color centers with high-Q cavities are considered.

A memristor device with an active layer of mixed metal oxide has been manufactured using reactive magnetron sputtering and electron lithography. The device’s electrical characteristics, such as the switching voltage and resistances in the low-resistance (LRS) and high-resistance (HRS) states, are stable and they a high resistance ratio in these states. The electrical properties of the device, which are similar to those of a living synapse by neural pulse propagation, have been determined. The possibility of the memristor application as a summing element of an artificial neuron is shown. The large value of the high-to-low resistance ratio and minor variation of the electrical characteristics make it possible to use the device in the neuromorphic computing systems.

The change in the functional properties of positive photoresists during their storage is a serious issue in photolithography. The recovery of the functional properties of photoresists, and especially, the quality of the edge of the formed elements and changes in their sizes compared to the sizes in the photostencil, is possible by the introduction of additives into the composition of positive photoresists which form hydrogen bonds with the novolak resins constituting them prior to their usage. Experimental verification of the correlation between the density of the hydrogen bonds and the photoresist resolution has been obtained.

The first experimental test of new DICE memory cells with the transistors spaced into two groups (Spaced Transistor Groups DICE—STG DICE), composed on a 65-nm CMOS static RAM proved their high upset resilience. The STG DICE memory cells have two communication wires between the two groups of transistors that made it possible to use the striping of groups of transistors to increase the distances between sensitive nodes of cells up to 2.32–3.09 μm at a small increase in cell area. The blocks of 65-nm 128 × 32-bit CMOS RAM cache and 32 × 64-bit multiport RAM based on the STG DICE cells are characterized by upset thresholds lying in the range of 3.55–4.05 nJ of the laser pulse energy with a pulse duration of 70 ps and diameter of the spot of 3.5 μm. These threshold values exceed the upset thresholds of 65-nm CMOS RAM on 6T memory cells by factors of 20 for RAM cache and 3.5 for multiport RAM. In STG DICE RAM multiple upsets are absent in contrast to RAM based on 6T-cells.

A method for the self-calibration of a remote fiber-optic hydrophone (FOH) providing the maximum sensitivity of the sensor in harsh exploitation conditions is proposed. The method is based on the periodic remote control of the current values of the key parameters characterizing the elastic and mechanical properties of the sensor element-micromembrane and optical properties of the measuring Fabry-Perot interferometer that determine the FOH sensitivity at large.