Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles

Abstract

An analytical model to evaluate the ionization response of a group of closely located p-n junctions under exposure to a separate heavy charged particle (HCP) in a diffusive approximation is proposed. It is revealed that, taking into account, the inhomogeneous boundary conditions leads to larger values of the collected charge in a separate sensitive area than in estimations in a classical approximation in the case of homogeneous boundary conditions. It is shown that in modern submicron VLSIs it is possible to increase the collected charge through the amplification properties of a parasitic bipolar transistor.