Study of the Effect of Technetium as a Component of the Catalysts of the REE Compounds on the Process of Decomposition of Monohydrides of Silicon and Germanium

Abstract

The effect of technetium as a component of the catalysts of the REE compounds on the decomposition process of monohydrides of silicon and germanium during the growth of epitaxial films of silicon and a silicon-germanium solid solution is found. It is demonstrated that due to the fact that the unit cell radius of technetium is 1.358 Å and is similar to the unit cell radius of the platinum-group of elements (1.37–1.38 Å), as a component of the catalysts of REE compounds, it delivers the stability of the specific catalytic activity and high level of selectivity of the decomposition of monosilane and monogermane into \({\text{SiH}}_{2}^{{{\text{**}}}}\) and \({\text{GeH}}_{2}^{{{\text{**}}}}.\) This in turn allows carrying out the process of growing epitaxial films in two stages and, in this way, improving their quality.