Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS1 –хSeх Materials
- 作者: Asadov S.M.1, Mustafaeva S.N.2, Lukichev V.F.3, Guseinov D.T.2
-
隶属关系:
- Nagiev Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences
- Institute of Physics, Azerbaijan National Academy of Sciences
- Valiev Institute of Physics and Technology, Russian Academy of Sciences
- 期: 卷 48, 编号 4 (2019)
- 页面: 203-207
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187136
- DOI: https://doi.org/10.1134/S1063739719040024
- ID: 187136
如何引用文章
详细
The effect of the composition of the GaS–GaSe layered solid solutions on their dielectric characteristics and ac conductivity in the frequency band of 5 × 104 to 3.5 × 107 Hz is investigated. It is shown that with an increase in the selenium content in the GaS1 –хSeх single crystals the real and imaginary parts of the complex permittivity, dissipation factor, and ac conductivity grow significantly. The experimentally observed decrease in the permittivity of the investigated solid solutions with an increase in the frequency from 5 × 104 to 3.5 × 107 Hz is attributed to the relaxation dispersion. The nature of dielectric loss (reach-through conductivity loss) in the GaS1 –хSeх single crystals and the hopping mechanism of charge transfer over the states localized at the Fermi level are established. The main parameters of the localized states in the GaS1 –хSeх band gap are estimated.
作者简介
S. Asadov
Nagiev Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences
Email: lukichev@ftian.ru
阿塞拜疆, Baku, 1143
S. Mustafaeva
Institute of Physics, Azerbaijan National Academy of Sciences
编辑信件的主要联系方式.
Email: solmust@gmail.com
阿塞拜疆, Baku, 1143
V. Lukichev
Valiev Institute of Physics and Technology, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: lukichev@ftian.ru
俄罗斯联邦, Moscow, 117218
D. Guseinov
Institute of Physics, Azerbaijan National Academy of Sciences
Email: lukichev@ftian.ru
阿塞拜疆, Baku, 1143
补充文件
