Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

M. E. Chernyak; E. V. Ranneva; A. V. Ulanova; A. Yu. Nikiforov; A. I. Verizhnikov; A. M. Tsyrlov; V. S. Fedosov; A. N. Shchepanov; V. D. Kalashnikov; D. O. Titovets

doi:10.1134/S1063739719060039

Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

Authors: Chernyak M.E.¹, Ranneva E.V.², Ulanova A.V.¹^,2, Nikiforov A.Y.¹, Verizhnikov A.I.³, Tsyrlov A.M.³, Fedosov V.S.³, Shchepanov A.N.⁴, Kalashnikov V.D.¹, Titovets D.O.¹
Affiliations:
1. National Research Nuclear University (MEPhI)
2. AO ENPO Specialized Electronic Systems
3. AO Proton
4. Mytishchi Scientific Research Institute of Radio Measuring Instruments
Issue: Vol 48, No 6 (2019)
Pages: 415-421
Section: Article
URL: https://journals.rcsi.science/1063-7397/article/view/187212
DOI: https://doi.org/10.1134/S1063739719060039
ID: 187212

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Abstract

This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples.