Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures
- Authors: Benediktov A.S.1, Ignatov P.V.1, Mikhailov A.A.1, Potupchik A.G.1
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Affiliations:
- Molecular Electronics Research Institute (MERI)
- Issue: Vol 47, No 5 (2018)
- Pages: 317-322
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186885
- DOI: https://doi.org/10.1134/S1063739718050037
- ID: 186885
Cite item
Abstract
In this paper, we estimate the basic parameters of 0.18-μm SOI MOS transistors in the temperature range from –60 to 300°С and investigate their reliability at high temperatures. The specific characteristics of SOI MOS transistors that manifest themselves at high temperatures should be taken into account when designing high-temperature integrated circuits in order to avoid their premature failures and improve the reliability of electronic devices.
About the authors
A. S. Benediktov
Molecular Electronics Research Institute (MERI)
Author for correspondence.
Email: asb_sm@mail.ru
Russian Federation, Zelenograd, Moscow, 124460
P. V. Ignatov
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Russian Federation, Zelenograd, Moscow, 124460
A. A. Mikhailov
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Russian Federation, Zelenograd, Moscow, 124460
A. G. Potupchik
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Russian Federation, Zelenograd, Moscow, 124460