320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes
- Authors: Belin A.M.1, Zolotarev V.I.1, Nikiforov A.Y.2, Popov A.D.1
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Affiliations:
- National Research University of Electronic Technology
- Shvabe-Photosystems
- Issue: Vol 45, No 7 (2016)
- Pages: 474-477
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185885
- DOI: https://doi.org/10.1134/S1063739716070027
- ID: 185885
Cite item
Abstract
The results of research and development of a 320 × 240 platinum silicide focal plane array (FPA) for the spectral range of 3–5 μm are presented. The development is based entirely on CMOS technology. It is shown that the FPA makes it possible to adjust the photosignal accumulation time at a fixed frame rate and subtract the background constant component in the output device.
About the authors
A. M. Belin
National Research University of Electronic Technology
Author for correspondence.
Email: ambelin@mail.ru
Russian Federation, Moscow, 124498
V. I. Zolotarev
National Research University of Electronic Technology
Email: ambelin@mail.ru
Russian Federation, Moscow, 124498
A. Yu. Nikiforov
Shvabe-Photosystems
Email: ambelin@mail.ru
Russian Federation, Moscow, 117545
A. D. Popov
National Research University of Electronic Technology
Email: ambelin@mail.ru
Russian Federation, Moscow, 124498