320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes

A. M. Belin; V. I. Zolotarev; A. Yu. Nikiforov; A. D. Popov

doi:10.1134/S1063739716070027

320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes

作者: Belin A.M.¹, Zolotarev V.I.¹, Nikiforov A.Y.², Popov A.D.¹
隶属关系:
1. National Research University of Electronic Technology
2. Shvabe-Photosystems
期: 卷 45, 编号 7 (2016)
页面: 474-477
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/185885
DOI: https://doi.org/10.1134/S1063739716070027
ID: 185885

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

The results of research and development of a 320 × 240 platinum silicide focal plane array (FPA) for the spectral range of 3–5 μm are presented. The development is based entirely on CMOS technology. It is shown that the FPA makes it possible to adjust the photosignal accumulation time at a fixed frame rate and subtract the background constant component in the output device.