Vol 48, No 2 (2019)

The influence of the duration of pulsed laser deposition on the properties of lithium niobate films is elucidated. An increase in the deposition time from 90 to 360 min is found to vary the LiNbO₃ film thickness from (47.5 ± 3.8) to (197.9 ± 15.8) nm as the roughness of the film surface increases from (3.57 ± 0.17) to (32.7 ± 2.32) nm and the grain size increases from (235 ± 22) to (346 ± 33) nm, respectively. The influence of PLD duration on phase composition, electrophysical, and optical properties of nanocrystalline LiNbO₃ films are also explored. The increase in the film thickness from (110.1 ± 8.8) to (143.8 ± 7.0) nm is established to cause the hysteresis in the polarization as a function of field strength, which allows us to refer these films as ferroelectric films and use them in state-of-the-art electron elements of acousto-optics and piezotechnics.

The regimes of submicron and nanosized profiling of the KDB-10 Si(100) wafer surface by the focused ion beam (FIB) technique are experimentally investigated. It is established that with an increase in the ion beam current from 1 to 300 pA, the diameter and depth of nanostructures increases from 45 to 380 nm and from 82 to 494 nm, respectively. The best resolution determined by the minimum distance between etched lines is found to be 10 nm. It is demonstrated that with a decrease in the ion beam current from 7 nA to 1 pA and in the dwell time from 100 to 0.2 µs, the deviation of etched structure walls from the vertical decreases to 30°. The results obtained can be used to develop technologies for fabricating nanoelectronic and microsystems engineering elements by the FIB technique.

The high-frequency electrical conductivity of a thin inhomogeneous metal wire with a dielectric core is calculated using the kinetic approach. The Fermi surface of a metal is assumed to be an ellipsoid of revolution with the rotational axis coinciding with the wire axis. In the investigated case of isotropic electron scattering, the volume relaxation time does not depend on either the energy or the direction of electron scattering. No limitations are imposed on the ratio between the conduction’s electron free path and wire radius. The dependences of the absolute value and argument of the dimensionless conductivity on the dimensionless transverse effective mass, dimensionless wire radius, dimensionless electric field frequency, and ratio between the wire and dielectric core radii are analyzed.

In this paper we study the thermodynamic, morphological, structural, and chemical properties of a composite material consisting of nickel nanowires (NWs) electrochemically deposited in the pores of the membrane of porous anodic aluminum oxide (PAA) by methods of differential thermal analysis (DTA), scanning electron microscopy (SEM), X-ray diffraction analysis (XRD), and dispersive X-ray spectroscopy (EDX).

The regularities of the modification of I–V characteristics of MIS structures via forming built-in surface potentials induced during the fabrication of an atomically pure silicon crystal surface using microwave plasma micromachining in different chemically active gaseous media are investigated. The effect of surface potentials on the slope of the I–V characteristics of the MIS devices and the value of their asymmetry at the reversal of the gate polarity are established. The increase in the slope of the I–V characteristics is attributed to the weakening of the diffuse scattering of electrons during the formation of negatively charged surface trap states at the interface and an increase in their mobility in the space charge layer at the semiconductor surface.