Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles
- Authors: Katunin Y.V.1, Stenin V.Y.1,2
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Affiliations:
- Scientific Research Institute of System Analysis, Russian Academy of Sciences
- National Research Nuclear University MEPhI
- Issue: Vol 48, No 3 (2019)
- Pages: 143-156
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187118
- DOI: https://doi.org/10.1134/S1063739719030077
- ID: 187118
Cite item
Abstract
The results of the TCAD modeling of a new CMOS logical C-element are presented. The logic element of the bulk 65-nm CMOS technology based on a modified STG DICE trigger with reduced switching delay and two inverters with the third state is designed for high-speed asynchronous CMOS-logic systems with increased noise immunity to the impacts of single nuclear particles. The transistors of the element are spaced into two groups in such a way that the collection of charge from the track of a single nuclear particle by the transistors of only one of them cannot lead to a failure of the logical state of the C-element trigger in the mode of signal transmission from the element input to the output. The noise immunity can be increased by the separation of two groups of transistors at a distance that eliminates the simultaneous impact of a single nuclear particle on both groups of transistors. The charge collection from the tracks with a linear energy transfer of 60 MeV cm2/mg does not lead to failure of the logical function of the element and to failures in the transmission of common-mode logic signals by the C-element.
About the authors
Yu. V. Katunin
Scientific Research Institute of System Analysis, Russian Academy of Sciences
Author for correspondence.
Email: yu.v.katunin@gmail.com
Russian Federation, Moscow, 117218
V. Ya. Stenin
Scientific Research Institute of System Analysis, Russian Academy of Sciences; National Research Nuclear University MEPhI
Author for correspondence.
Email: vystenin@mephi.ru
Russian Federation, Moscow, 117218; Moscow, 115409