Email this article Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics
- Authors: Sergeev V.A.1,2, Frolov I.V.1, Shirokov A.A.1
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics, Ul’yanovsk Branch
- Ulyanovsk State Technical University
- Issue: Vol 45, No 7 (2016)
- Pages: 498-503
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185940
- DOI: https://doi.org/10.1134/S1063739716070155
- ID: 185940
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Abstract
To explain the current dependences of the mean-square value of low-frequency (LF) noise current in green InGaN light emitting diodes (LEDs), a double stage low-frequency noise equivalent circuit of the LED is proposed. It is shown that the nonmonotonic dependence of the LF noise on the injection current in the LED can be explained by the effect of two LF noise generators: a noise current generator, which is localized near the heterojunction and is determined by tunnel-recombination processes at the interface, and a generator determined by recombination processes in the active region of the structure.
About the authors
V. A. Sergeev
Kotel’nikov Institute of Radio Engineering and Electronics, Ul’yanovsk Branch; Ulyanovsk State Technical University
Author for correspondence.
Email: sva@ulstu.ru
Russian Federation, Ulyanovsk, 432011; Ulyanovsk, 432027
I. V. Frolov
Kotel’nikov Institute of Radio Engineering and Electronics, Ul’yanovsk Branch
Email: sva@ulstu.ru
Russian Federation, Ulyanovsk, 432011
A. A. Shirokov
Kotel’nikov Institute of Radio Engineering and Electronics, Ul’yanovsk Branch
Email: sva@ulstu.ru
Russian Federation, Ulyanovsk, 432011
