Email this article Specifics of electromagnetic radiation effects on integrated circuits
- Authors: Skorobogatov P.K.1,2, Gerasimchuk O.A.3, Epifantsev K.A.1, Telets V.A.1
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Affiliations:
- National Research Nuclear University MEPhI
- Specialized Electronic Systems (SPELS)
- Impul’snaya tekhnika Research and Production Center
- Issue: Vol 46, No 3 (2017)
- Pages: 166-170
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186323
- DOI: https://doi.org/10.1134/S1063739717030088
- ID: 186323
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Abstract
Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry.
About the authors
P. K. Skorobogatov
National Research Nuclear University MEPhI; Specialized Electronic Systems (SPELS)
Author for correspondence.
Email: pkskor@spels.ru
Russian Federation, Moscow, 115409; Moscow, 115409
O. A. Gerasimchuk
Impul’snaya tekhnika Research and Production Center
Email: pkskor@spels.ru
Russian Federation, Moscow, 115304
K. A. Epifantsev
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
Russian Federation, Moscow, 115409
V. A. Telets
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
Russian Federation, Moscow, 115409
