Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips


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Abstract

The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown.

About the authors

V. M. Roshchin

National Research University of Electronic Technology (MIET)

Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow

I. N. Petukhov

National Research University of Electronic Technology (MIET)

Author for correspondence.
Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow

K. S. Sen’chenko

National Research University of Electronic Technology (MIET)

Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow

A. V. Roshchina

National Research University of Electronic Technology (MIET)

Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow

T. V. Shilina

National Research University of Electronic Technology (MIET)

Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow


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