Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips
- Authors: Roshchin V.M.1, Petukhov I.N.1, Sen’chenko K.S.1, Roshchina A.V.1, Shilina T.V.1
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Affiliations:
- National Research University of Electronic Technology (MIET)
- Issue: Vol 46, No 7 (2017)
- Pages: 454-457
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186614
- DOI: https://doi.org/10.1134/S1063739717070095
- ID: 186614
Cite item
Abstract
The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown.
About the authors
V. M. Roshchin
National Research University of Electronic Technology (MIET)
Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow
I. N. Petukhov
National Research University of Electronic Technology (MIET)
Author for correspondence.
Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow
K. S. Sen’chenko
National Research University of Electronic Technology (MIET)
Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow
A. V. Roshchina
National Research University of Electronic Technology (MIET)
Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow
T. V. Shilina
National Research University of Electronic Technology (MIET)
Email: OFH.MIET@yandex.ru
Russian Federation, Zelenograd, Moscow