Email this article A nonlinear microwave model of a low-barrier diode based on semiconductor junctions
- Authors: Arykov V.S.1, Yunusov I.V.1, Kagadei V.A.1, Fazleeva A.Y.1
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Affiliations:
- Micran Research and Production Company
- Issue: Vol 45, No 3 (2016)
- Pages: 196-204
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185634
- DOI: https://doi.org/10.1134/S1063739716020116
- ID: 185634
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Abstract
A refined nonlinear model of a low-barrier diode based on semiconductor junctions, which is constructed in a modified equivalent electric circuit, is proposed. The model takes into account the design features of diodes of this type, as compared with a well-known model, and can be recommended for use in designing frequency converting monolithic microwave integrated circuits (MMICs) in a frequency range of up to 110 GHz.
About the authors
V. S. Arykov
Micran Research and Production Company
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634045
I. V. Yunusov
Micran Research and Production Company
Author for correspondence.
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634045
V. A. Kagadei
Micran Research and Production Company
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634045
A. Yu. Fazleeva
Micran Research and Production Company
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634045
