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Vol 47, No 1 (2018)
- Year: 2018
- Articles: 7
- URL: https://journals.rcsi.science/1063-7397/issue/view/11697
Article
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm
Abstract
The plasma-enhanced atomic layer deposition (PEALD) of a High-K Dielectric and Metal Gate (HkMG) stack for MIS transistors, including the subgate HfO2 (2–4 nm) dielectric layer, the ultrathin metallic stabilizing hafnium nitride HfN (1–3 nm) layer, and the basic metallic gate layer from tantalum nitride ТаN (10–20 nm), on silicon plates with a diameter of 200 mm is studied. The spectral ellipsometry method is applied to measure the homogeneity of the deposited film thickness. The dielectric constant of the dielectric in the stack, the leak current, and the breakdown voltage are examined. The four-probe method is used to study the specific electric resistance of tantalum nitride deposited by the atomic layer deposition ALD method. The film thickness homogeneity as a function of the ALD process parameters is examined. The specific resistance of the metallic TaN layer as a function of the composition and parameters of the plasma discharge are studied.
1-10
Simulating the Effects of Internal Mechanical Stresses on the Decomposition Kinetics of a Supersaturated Oxygen Solution in Silicon
Abstract
We justify and exactly formulate a method for simulating the effect of mechanical stresses induced in a system silicon matrix–oxygen precipitate (SiO2) on the rates of fundamental processes determining the kinetics of precipitation. The developed model is based on the classical theory of kinetics of the first-order phase transitions with regard to the observed features of the SiO2 particle growth in silicon (two-stage precipitation) and the main relations of the theory of elasticity. The proposed approach is used to establish and analyze the dependences of the main kinetic parameters describing the variations in the number of critical nuclei of the precipitate phase on the characteristics of the interfacial mechanical stresses induced and developed during the postcrystallization cooling of silicon wafers.
11-19
Simulation of Single Event Effects in STG DICE Memory Cells
Abstract
TCAD simulation of single event effects in memory cells with transistors spaced into two groups (spaced transistor groups—STG DICE) is carried out on the set of test tracks passing through the drains of mutually sensitive CMOS transistors from one group and between the two groups at depths of 50–850 nm from the chip surface. When the charge from the track affects only one group of transistors, no upsets occur; in this case, the duration of the unsteady state is described by a linear function with a coefficient of 1.3–2.4 ps/(MeV cm2/mg) for tracks 50–350 nm deep and a coefficient of 11–12 ps/(MeV cm2/mg) for tracks 450–850 nm deep, with the linear energy transfer on the tracks ranging from 1 to 60 MeV cm2/mg in both cases. An upset of the logical state of the STG DICE cell can occur when the particle tracks follow the line connecting the two groups of transistors and when angular deviations from it are in the range of 40°. With the track normal to the chip surface, an upset can occur when the linear energy transfer exceeds 50–60 MeV cm2/mg.
20-33
Visualization of Defects on the Semiconductor Surface Using a Dielectric Barrier Discharge
Abstract
It is demonstrated that plasma techniques can be used to detect various defects on a solid surface by a self-sustained discharge under atmospheric pressure. Special attention is paid to controlling surface defects and the end cleavages of semiconducting wafers and pinholes of layered structures.
34-39
Studying the Thermodynamic Characteristics of Anodic Alumina
Abstract
We report on the complex scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectroscopy, and differential thermal analysis study of the composition, structure, and thermodynamic characteristics of a porous alumina membrane.
40-49
Basic Techniques of Increasing Resolution of Photopolymerizable Compositions
Abstract
Photopolymerizing liquid compositions via a radical mechanism and enabling the formation of products with a thickness ranging from ten to several hundred micrometers and the linear dimensions of elements of several micrometers are considered. They are mixtures of organic oligomers and monomers, and the correlation time of the rotational motion of a paramagnetic probe (2,2,6,6-tetramethyl-4-oxypiperidine-1-oxyl) in them is (4–6) × 10–10 s. Only photopolymerizable compositions (PPCs) with such a correlation time can simultaneously provide the highest values of the photopolymerization rate, light sensitivity, and photolithography resolution. Their core components consist of a photoinitiator generating free radicals through Norrish type I reaction and a highly efficient inhibitor of radical polymerization. An ultimately high resolution of optical lithography can be achieved by using PPCs in which polymerization proceeds via a terminationless mechanism, no increase in light scattering is observed upon exposure, and in which a polymerization inhibiting system is present, but with limitations placed on the diffusion of the inhibitor. Systems in which polymerization proceeds via a microheterogeneous mechanism are not suitable for this purpose. The possibility of creating such PPCs arises from the phenomena of stopping chemical reactions and leveling reactive capacity.
50-64
A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power Consumption
Abstract
We describe a CMOSLD system to automate the design of irregular logic circuits of CMOS library elements. The main criteria of circuits optimization are the area and the power consumption. This system is integrated with software packages Questa Sim, LeonardoSpectrum, and Accusim II (Mentor Graphics). This makes it possible to perform efficiently logical simulation, synthesis, resynthesis and estimation of energy consumption based on logical and circuit simulation.
65-81