Resistive switching in mesoscopic heterostructures based on Nd 2– x  Ce  x  CuO 4– y   epitaxial films

N. A. Tulina; A. A. Ivanov; A. N. Rossolenko; I. M. Shmytko; A. M. Ionov; R. N. Mozhchil’; I. Yu. Borisenko

doi:10.1134/S1063739717030106

Resistive switching in mesoscopic heterostructures based on Nd_2–xCe_xCuO_4–y epitaxial films

Autores: Tulina N.A.¹, Ivanov A.A.², Rossolenko A.N.¹, Shmytko I.M.¹, Ionov A.M.¹, Mozhchil’ R.N.¹^,2, Borisenko I.Y.³
Afiliações:
1. Institute of Solid State Physics
2. National Research Nuclear University (MEPhI)
3. Institute of Microelectronics Technology and High-Purity Materials
Edição: Volume 46, Nº 3 (2017)
Páginas: 180-185
Seção: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186338
DOI: https://doi.org/10.1134/S1063739717030106
ID: 186338

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Somente assinantes

Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

Reversible and stable bistable resistive switching were observed in planar-type junctions Nd_2–xCe_xCuO_4–y/Nd_2–xCe_xO_1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd_2–xCe_xO_1.75, deficient in oxygen, epitaxially germinated at the Nd_2–xCe_xCuO_4–y surface.