Resistive switching in mesoscopic heterostructures based on Nd2–xCexCuO4–y epitaxial films


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Abstract

Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–xCexCuO4–y/Nd2–xCexO1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–xCexO1.75, deficient in oxygen, epitaxially germinated at the Nd2–xCexCuO4–y surface.

About the authors

N. A. Tulina

Institute of Solid State Physics

Author for correspondence.
Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432

A. A. Ivanov

National Research Nuclear University (MEPhI)

Email: tulina@issp.ac.ru
Russian Federation, Moscow, 119991

A. N. Rossolenko

Institute of Solid State Physics

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432

I. M. Shmytko

Institute of Solid State Physics

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432

A. M. Ionov

Institute of Solid State Physics

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432

R. N. Mozhchil’

Institute of Solid State Physics; National Research Nuclear University (MEPhI)

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432; Moscow, 119991

I. Yu. Borisenko

Institute of Microelectronics Technology and High-Purity Materials

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432


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