The Use of Finite Element Modeling for Calculating the C-V Curve of Capacitor Mems Microphone
- Authors: Grigor’ev D.M.1, Godovitsyn I.V.1, Amelichev V.V.1, Generalov S.S.1, Polomoshnov S.A.1
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Affiliations:
- Scientific-Manufacturing Complex Technological Center MIET
- Issue: Vol 46, No 6 (2017)
- Pages: 396-403
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186564
- DOI: https://doi.org/10.1134/S1063739717060075
- ID: 186564
Cite item
Abstract
The C-V curve is an important characteristic of a MEMS microphone as it determines its operating voltage and sensitivity. Due to the complicated geometry of its fixed perforated backplate and thin movable diaphragm, it requires finite element modeling to calculate the C-V curve. Various methods to solve this problem are considered in this work, and implementation of the iterative calculation method using the ANSYS software package is proposed. The results obtained using the iterative method and the two calculating methods of electrostatic interaction built into the ANSYS software are compared and analyzed.
About the authors
D. M. Grigor’ev
Scientific-Manufacturing Complex Technological Center MIET
Author for correspondence.
Email: D.Grigorev@tcen.ru
Russian Federation, Moscow, 124498
I. V. Godovitsyn
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
Russian Federation, Moscow, 124498
V. V. Amelichev
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
Russian Federation, Moscow, 124498
S. S. Generalov
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
Russian Federation, Moscow, 124498
S. A. Polomoshnov
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
Russian Federation, Moscow, 124498