Issue |
Title |
File |
Vol 45, No 7 (2016) |
320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes |
|
Belin A.M., Zolotarev V.I., Nikiforov A.Y., Popov A.D.
|
Vol 45, No 7 (2016) |
A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode |
|
Grigoriev F.I., Aleksandrova A.B., Gafurov V.A.
|
Vol 45, No 4 (2016) |
A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles |
|
Boruzdina A.B., Ulanova A.V., Chumakov A.I., Yanenko A.V.
|
Vol 47, No 7 (2018) |
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders |
|
Starykh A.A., Kovalev A.V.
|
Vol 48, No 5 (2019) |
A New Voltage Level Shifter For Low-Power Applications |
|
Shubin V.V.
|
Vol 45, No 3 (2016) |
A nonlinear microwave model of a low-barrier diode based on semiconductor junctions |
|
Arykov V.S., Yunusov I.V., Kagadei V.A., Fazleeva A.Y.
|
Vol 48, No 6 (2019) |
A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer |
|
Filali W., Garoudja E., Oussalah S., Mekheldi M., Sengouga N., Henini M.
|
Vol 45, No 8-9 (2016) |
A study of magnetic and electronic hyperfine interactions in epitaxial film of yttrium-iron garnet by the method of conversion electron Mössbauer spectroscopy |
|
Moklyak V.V.
|
Vol 48, No 7 (2019) |
A study of the Composition of Tellurium Vapor by the Static Method |
|
Vigdorovich E.N.
|
Vol 47, No 1 (2018) |
A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power Consumption |
|
Bibilo P.N., Avdeev N.A., Kardash S.N., Kirienko N.A., Lankevich Y.Y., Loginova I.P., Romanov V.I., Cheremisinov D.I., Cheremisinova L.D.
|
Vol 46, No 4 (2017) |
A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films |
|
Ishchenko D.V., Kuchumov B.M.
|
Vol 47, No 4 (2018) |
A Thin-Film Platform for Chemical Gas Sensors |
|
Roslyakov I.V., Napolskii K.S., Stolyarov V.S., Karpov E.E., Ivashev A.V., Surtaev V.N.
|
Vol 45, No 2 (2016) |
A universal digital platform for the construction of self-organizing wireless sensor networks for industrial safety and ecological monitoring systems |
|
Sukhanov A.V., Prokof’ev I.V., Ivanov A.V.
|
Vol 48, No 7 (2019) |
Absorbing Elements Based on a Uniform Resistive Film for the Implementation of a Wide Range of Radio Signal Power Attenuations |
|
Sadkov V., Fomina K., Pil’kevich A.
|
Vol 46, No 1 (2017) |
Alloying carbon nanotubes |
|
Saurov A.N., Bulyarskii S.V.
|
Vol 47, No 7 (2018) |
An Integrated High-Capacitance Varicap Based on Porous Silicon |
|
Timoshenkov S.P., Boyko A.N., Gaev D.S., Kalmykov R.M.
|
Vol 46, No 7 (2017) |
Analysis and Simulation of Vertical Complementary Silicon Bipolar Transistors |
|
Hrapov M.O., Gridchin V.A., Kalinin S.V.
|
Vol 45, No 3 (2016) |
Analysis of the technological characteristics in fabricating SOI MEMS transducers |
|
Parfenov N.M.
|
Vol 47, No 5 (2018) |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation |
|
Vyurkov V.V., Khabutdinov R.R., Nemtsov A.B., Semenikhin I.A., Rudenko M.K., Rudenko K.V., Lukichev V.F.
|
Vol 47, No 7 (2018) |
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors |
|
Hrapov M.O., Gluhov A.V., Gridchin V.A., Kalinin S.V.
|
Vol 46, No 8 (2017) |
Application of Radioactive Isotopes for Beta-Voltaic Generators |
|
Bykov A.S., Polisan A.A., Chichkov M.V., Temirov A.A., Zhukov R.N., Ksenich S.V., Kiselev D.A., Kislyuk A.M., Kubasov I.V., Malinkovich M.D., Parkhomenko Y.N.
|
Vol 46, No 7 (2017) |
Application of Two-Wavelength X-Ray Optical Scheme for Combined Measurements of X-Ray Specular Reflection and Diffuse Scattering to Study Multilayered Thin Film Structures |
|
Smirnov D.I., Gerasimenko N.N., Ovchinnikov V.V.
|
Vol 47, No 5 (2018) |
Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics |
|
Kudrya V.P., Maishev Y.P.
|
Vol 47, No 1 (2018) |
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm |
|
Rudenko K.V., Myakon’kikh A.V., Rogozhin A.E., Gushchin O.P., Gvozdev V.A.
|
Vol 47, No 2 (2018) |
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia |
|
Abdulagatov A.I., Ramazanov S.M., Dallaev R.S., Murliev E.K., Palchaev D.K., Rabadanov M.K., Abdulagatov I.M.
|
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