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Issue Title File
Vol 45, No 7 (2016) 320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes
Belin A.M., Zolotarev V.I., Nikiforov A.Y., Popov A.D.
Vol 45, No 7 (2016) A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode
Grigoriev F.I., Aleksandrova A.B., Gafurov V.A.
Vol 45, No 4 (2016) A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles
Boruzdina A.B., Ulanova A.V., Chumakov A.I., Yanenko A.V.
Vol 47, No 7 (2018) A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders
Starykh A.A., Kovalev A.V.
Vol 48, No 5 (2019) A New Voltage Level Shifter For Low-Power Applications
Shubin V.V.
Vol 45, No 3 (2016) A nonlinear microwave model of a low-barrier diode based on semiconductor junctions
Arykov V.S., Yunusov I.V., Kagadei V.A., Fazleeva A.Y.
Vol 48, No 6 (2019) A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer
Filali W., Garoudja E., Oussalah S., Mekheldi M., Sengouga N., Henini M.
Vol 45, No 8-9 (2016) A study of magnetic and electronic hyperfine interactions in epitaxial film of yttrium-iron garnet by the method of conversion electron Mössbauer spectroscopy
Moklyak V.V.
Vol 48, No 7 (2019) A study of the Composition of Tellurium Vapor by the Static Method
Vigdorovich E.N.
Vol 47, No 1 (2018) A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power Consumption
Bibilo P.N., Avdeev N.A., Kardash S.N., Kirienko N.A., Lankevich Y.Y., Loginova I.P., Romanov V.I., Cheremisinov D.I., Cheremisinova L.D.
Vol 46, No 4 (2017) A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films
Ishchenko D.V., Kuchumov B.M.
Vol 47, No 4 (2018) A Thin-Film Platform for Chemical Gas Sensors
Roslyakov I.V., Napolskii K.S., Stolyarov V.S., Karpov E.E., Ivashev A.V., Surtaev V.N.
Vol 45, No 2 (2016) A universal digital platform for the construction of self-organizing wireless sensor networks for industrial safety and ecological monitoring systems
Sukhanov A.V., Prokof’ev I.V., Ivanov A.V.
Vol 48, No 7 (2019) Absorbing Elements Based on a Uniform Resistive Film for the Implementation of a Wide Range of Radio Signal Power Attenuations
Sadkov V., Fomina K., Pil’kevich A.
Vol 46, No 1 (2017) Alloying carbon nanotubes
Saurov A.N., Bulyarskii S.V.
Vol 47, No 7 (2018) An Integrated High-Capacitance Varicap Based on Porous Silicon
Timoshenkov S.P., Boyko A.N., Gaev D.S., Kalmykov R.M.
Vol 46, No 7 (2017) Analysis and Simulation of Vertical Complementary Silicon Bipolar Transistors
Hrapov M.O., Gridchin V.A., Kalinin S.V.
Vol 45, No 3 (2016) Analysis of the technological characteristics in fabricating SOI MEMS transducers
Parfenov N.M.
Vol 47, No 5 (2018) Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation
Vyurkov V.V., Khabutdinov R.R., Nemtsov A.B., Semenikhin I.A., Rudenko M.K., Rudenko K.V., Lukichev V.F.
Vol 47, No 7 (2018) Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors
Hrapov M.O., Gluhov A.V., Gridchin V.A., Kalinin S.V.
Vol 46, No 8 (2017) Application of Radioactive Isotopes for Beta-Voltaic Generators
Bykov A.S., Polisan A.A., Chichkov M.V., Temirov A.A., Zhukov R.N., Ksenich S.V., Kiselev D.A., Kislyuk A.M., Kubasov I.V., Malinkovich M.D., Parkhomenko Y.N.
Vol 46, No 7 (2017) Application of Two-Wavelength X-Ray Optical Scheme for Combined Measurements of X-Ray Specular Reflection and Diffuse Scattering to Study Multilayered Thin Film Structures
Smirnov D.I., Gerasimenko N.N., Ovchinnikov V.V.
Vol 47, No 5 (2018) Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
Kudrya V.P., Maishev Y.P.
Vol 47, No 1 (2018) Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm
Rudenko K.V., Myakon’kikh A.V., Rogozhin A.E., Gushchin O.P., Gvozdev V.A.
Vol 47, No 2 (2018) Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia
Abdulagatov A.I., Ramazanov S.M., Dallaev R.S., Murliev E.K., Palchaev D.K., Rabadanov M.K., Abdulagatov I.M.
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