Geometric Effects in Current-Voltage Characteristics of a Cross-Shaped MDM Ni/NiO/Fe Structure
- Authors: Malikov I.V.1, Berezin V.A.1, Fomin L.A.1, Mikhailov G.M.1
-
Affiliations:
- Institute of Microelectronic Technology and High Purity Materials
- Issue: Vol 47, No 3 (2018)
- Pages: 181-186
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186824
- DOI: https://doi.org/10.1134/S1063739718030095
- ID: 186824
Cite item
Abstract
The current–voltage (I–U) characteristics of a cross-shaped metal-dielectric-metal (MDM) Ni/NiO/Fe structures with NiO layers of different thicknesses are investigated. The dependence of the sign of the differential resistance on the current flowing through the structure and on the thickness of the NiO in a four-contact measuring system of potentials is revealed. In a region 8–10 nm thick, the voltage on the structure changes sign thrice and has the form of an N-shaped curve. This dependence is explained by the geometric effect, which appears due to the competition between the vertical and lateral electron transport, when the ratio of the resistances of the dielectric interlayer and metallic leading electrodes changes under the influence of the current. The numerical calculation confirms the experimentally observed I–U dependences.
About the authors
I. V. Malikov
Institute of Microelectronic Technology and High Purity Materials
Author for correspondence.
Email: malikov@iptm.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
V. A. Berezin
Institute of Microelectronic Technology and High Purity Materials
Email: malikov@iptm.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
L. A. Fomin
Institute of Microelectronic Technology and High Purity Materials
Email: malikov@iptm.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
G. M. Mikhailov
Institute of Microelectronic Technology and High Purity Materials
Email: malikov@iptm.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432