Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching


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Abstract

The masking properties are studied for polymeric structures based on a triacrylamide derivative of polyfluorochalcone at wet etching in aqueous acidic (H2SO4, H3PO4) and alkaline (NaOH) environments, as well as at reactive ion etching (CF4). The kinetic curves are obtained and the etching rates inherent in the photoresists are estimated. A comparison with commercially available photoresists AZ4562 and SU-8 is performed.

About the authors

S. V. Derevyashkin

Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences,
; Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences

Author for correspondence.
Email: Lilpick69@mail.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

E. A. Soboleva

Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences,

Email: Lilpick69@mail.ru
Russian Federation, Novosibirsk, 630090

V. V. Shelkovnikov

Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences,
; Novosibirsk State Technical University

Email: Lilpick69@mail.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073

A. I. Malyshev

Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences

Email: Lilpick69@mail.ru
Russian Federation, Novosibirsk, 630090

V. P. Korolkov

Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences

Email: Lilpick69@mail.ru
Russian Federation, Novosibirsk, 630090


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