Email this article Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz
- Authors: Mal’tsev P.P.1, Maitama M.V.1, Pavlov A.Y.1, Shchavruk N.V.1
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Affiliations:
- Institute of Microwave Semiconductor Electronics
- Issue: Vol 45, No 7 (2016)
- Pages: 516-521
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185983
- DOI: https://doi.org/10.1134/S1063739716070118
- ID: 185983
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Abstract
Discrete electrostatic microwave microelectromechanical switches on gallium arsenide wafers are designed and fabricated. The possibility of integrating the switches in one circuit with monolithic integrated circuits of transreceiving devices fabricated in one production cycle is estimated.
About the authors
P. P. Mal’tsev
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Russian Federation, Moscow, 117105
M. V. Maitama
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Russian Federation, Moscow, 117105
A. Yu. Pavlov
Institute of Microwave Semiconductor Electronics
Email: isvch@isvch.ru
Russian Federation, Moscow, 117105
N. V. Shchavruk
Institute of Microwave Semiconductor Electronics
Author for correspondence.
Email: isvch@isvch.ru
Russian Federation, Moscow, 117105
