| Issue |
Title |
File |
| Vol 52, No 5 (2023) |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
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|
Sirotkin V.V.
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| Vol 53, No 1 (2024) |
Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping |
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|
Golikov O.L., Kodochigov N.E., Obolensky S.V., Puzanov A.S., Tarasova E.A., Khazanova S.V.
|
| Vol 53, No 1 (2024) |
Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology |
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|
Gaidukasov R.A., Miakonkikh A.V.
|
| Vol 53, No 2 (2024) |
Application of the finite element method for calculating the surface acoustic wave parameters and devices |
|
|
Koigerov A.S.
|
| Vol 52, No 1 (2023) |
Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |
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|
Zavitaev E.V., Rusakov O.V., Chukhleb E.P.
|
| Vol 52, No 4 (2023) |
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures |
|
|
Efremov A.M., Bobylev A.V., Kwon K.
|
| Vol 52, No 1 (2023) |
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy |
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|
Murin D.B., Chesnokov I.A., Pivovarenok S.A., Efremov A.M.
|
| Vol 52, No 2 (2023) |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
|
|
Rogozhin A.E., Sidorov F.A.
|
| Vol 52, No 3 (2023) |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
|
|
Tsunvaza D., Ryzhuk R.V., Vasil’evskii I.S., Kargin N.I., Klokov V.A.
|
| Vol 52, No 6 (2023) |
Design of integrated voltage multipliers using standard CMOS technologies |
|
|
Sinyukin A.S., Konoplev B.G., Kovalev A.V.
|
| Vol 52, No 4 (2023) |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
|
|
Saenko A.V., Vakulov Z.E., Klimin V.S., Bilyk G.E., Malyukov S.P.
|
| Vol 52, No 5 (2023) |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
|
|
Mordvintsev V.M., Kudryavtsev S.E., Naumov V.V., Gorlachev E.S.
|
| Vol 53, No 1 (2024) |
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
|
|
Golikov O.L., Zabavichev I.Y., Ivanov A.S., Obolensky S.V., Obolenskaya E.S., Paveliev D.G., Potekhin A.A., Puzanov A.S., Tarasova E.A., Khazanova S.V.
|
| Vol 52, No 5 (2023) |
Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane |
|
|
Murin D.B., Chesnokov I.A., Gogulev I.A., Grishkov A.E.
|
| Vol 52, No 6 (2023) |
Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |
|
|
Kovalchuk N.S., Lastovsky S.B., Odzhaev V.B., Petlitsky A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovsky Y.N.
|
| Vol 52, No 3 (2023) |
Fast Electrochemical Micropump for Portable Drug Delivery Module |
|
|
Uvarov I.V., Shlepakov P.S., Abramychev A.M., Svetovoy V.B.
|
| Vol 53, No 1 (2024) |
Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |
|
|
Gorlachev E.S., Mordvintsev V.M., Kudryavtsev S.E.
|
| Vol 52, No 3 (2023) |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
|
|
Polushkin E.A., Nefed’ev S.V., Koval’chuk A.V., Soltanovich O.A., Shapoval S.Y.
|
| Vol 52, No 4 (2023) |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
|
|
Kuznetsova I.A., Savenko O.V., Romanov D.N.
|
| Vol 52, No 5 (2023) |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
|
|
Novoselov A.S., Masalskii N.V.
|
| Vol 53, No 2 (2024) |
Influence of nickel impurities on the operational parameters of a silicon solar cell |
|
|
Kenzhaev Z.T., Zikrillaev N.F., Odzhaev V.B., Ismailov K.A., Prosolovich V.S., Zikrillaev K.F., Koveshnikov S.V.
|
| Vol 52, No 4 (2023) |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
|
|
Koval’chuk N.S., Lastovskii S.B., Odzhaev V.B., Petlitskii A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovskii Y.N.
|
| Vol 53, No 1 (2024) |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
|
|
Rogozhin A.E., Glaz O.G.
|
| Vol 52, No 2 (2023) |
Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide |
|
|
Kerimov E.A.
|
| Vol 52, No 2 (2023) |
Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators |
|
|
Tsukanov A.V., Kateev I.Y.
|
| Vol 52, No 4 (2023) |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
|
|
Fadeev A.V., Myakon’kikh A.V., Smirnova E.A., Simakin S.G., Rudenko K.V.
|
| Vol 52, No 6 (2023) |
MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE |
|
|
Belozerov I.A., Uvarov I.V.
|
| Vol 53, No 1 (2024) |
Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |
|
|
Asadov M.M., Huseynova S.S., Mustafaeva S.N., Mammadova S.O., Lukichev V.F.
|
| Vol 53, No 1 (2024) |
Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |
|
|
Asadov M.M., Mammadova S.O., Mustafaeva S.N., Huseynova S.S., Lukichev V.F.
|
| Vol 53, No 2 (2024) |
Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
|
|
Asadov S.M.
|
| Vol 53, No 1 (2024) |
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |
|
|
Ezhovskii Y.K., Mikhailovskii S.V.
|
| Vol 52, No 4 (2023) |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
|
|
Tulina N.A., Rossolenko A.N., Borisenko I.Y., Ivanov A.A.
|
| Vol 52, No 5 (2023) |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
|
|
Fetisenkova K.A., Rogozhin A.E.
|
| Vol 52, No 6 (2023) |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
|
|
Altudov Y.K., Gaev D.S., Pskhu A.V., Rekhviashvili S.S.
|
| Vol 52, No 2 (2023) |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
|
|
Isaev A.G., Permyakova O.O., Rogozhin A.E.
|
| Vol 53, No 1 (2024) |
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |
|
|
Miakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V.
|
| Vol 52, No 5 (2023) |
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements |
|
|
Prokaznikov A.V., Paporkov V.A., Chirikov V.A., Evseeva N.A.
|
| Vol 52, No 6 (2023) |
Performance calculation for a MEMS switch with «floating» electrode |
|
|
Morozov M.O., Uvarov I.V.
|
| Vol 52, No 2 (2023) |
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture |
|
|
Efremov A.M., Betelin V.B., Kwon K.
|
| Vol 52, No 3 (2023) |
Precise Tomography of Qudits |
|
|
Bogdanov Y.I., Bogdanova N.A., Kuznetsov Y.A., Koksharov K.B., Lukichev V.F.
|
| Vol 52, No 6 (2023) |
PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2 |
|
|
Murin D.B., Chesnokov I.A., Gogulev I.A., Grishkov A.E.
|
| Vol 52, No 5 (2023) |
Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range |
|
|
Zuev S.Y., Lopatin A.Y., Luchin V.I., Salashchenko N.N., Tsybin N.N., Chkhalo N.I.
|
| Vol 52, No 6 (2023) |
Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |
|
|
Baranov M.A., Karseeva E.K., Tsybin O.Y.
|
| Vol 52, No 3 (2023) |
Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots |
|
|
Tsukanov A.V., Kateev I.Y.
|
| Vol 53, No 1 (2024) |
Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |
|
|
Polyakova V.V., Saenko A.V., Kots I.N., Kovalev A.V.
|
| Vol 53, No 2 (2024) |
Ripple of a DC/DC converter based on SEPIC topology |
|
|
Bityukov V.K., Lavrenov A.I.
|
| Vol 52, No 2 (2023) |
SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits |
|
|
Novikov Y.A., Filippov M.N.
|
| Vol 52, No 3 (2023) |
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
|
|
Serov D.A., Khorin I.A.
|
| Vol 52, No 4 (2023) |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
|
|
Masalskii N.V.
|
| Vol 52, No 1 (2023) |
Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2 |
|
|
Asadov M.M., Mustafaeva S.N., Guseinova S.S., Lukichev V.F.
|
| Vol 52, No 3 (2023) |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
|
|
Asadov M.M., Mammadova S.O., Huseynova S.S., Mustafaeva S.N., Lukichev V.F.
|
| Vol 52, No 5 (2023) |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
|
|
Makhviladze T.M., Sarychev M.E.
|
| Vol 52, No 6 (2023) |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
|
|
Pozdnyakov D.V., Borzdov A.V., Borzdov V.M.
|
| Vol 52, No 4 (2023) |
Single Event Displacement Effects in a VLSI |
|
|
Chumakov A.I.
|
| Vol 53, No 2 (2024) |
Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters |
|
|
Lomov A.A., Seredin B.M., Martyushov S.Y., Tatarintsev A.A., Popov V.P., Malibashev A.V.
|
| Vol 53, No 1 (2024) |
Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses |
|
|
Nefedov D.V., Shabunin N.O., Bratashov D.N.
|
| Vol 52, No 1 (2023) |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
|
|
Kerimov E.A.
|
| Vol 52, No 4 (2023) |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
|
|
Glushko A.A., Morozov S.A., Chistyakov M.G.
|
| Vol 52, No 4 (2023) |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation |
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|
Evstafieva M.V., Knyazev M.A., Korepanov V.I., Red’kin A.N., Roschupkin D.V., Yakimov E.E.
|
| Vol 52, No 3 (2023) |
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates |
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|
Klimov E.A., Pushkarev S.S., Klochkov A.N., Mozhaeva M.O.
|
| Vol 53, No 2 (2024) |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
|
|
Khamzin E.K., Uslin D.A.
|
| Vol 52, No 5 (2023) |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma |
|
|
Efremov A.M., Smirnov S.A., Betelin V.B.
|
| Vol 53, No 2 (2024) |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
|
|
Chumakov A.I.
|
| Vol 52, No 4 (2023) |
Tomography of Detectors Taking Dead Time into Account |
|
|
Bogdanov Y.I., Katamadze K.G., Borshchevskaya N.A., Avosopiants G.V., Bogdanova N.A., Kulik S.P., Lukichev V.F.
|
| Vol 52, No 6 (2023) |
ВНИМАНИЮ АВТОРОВ |
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| Vol 52, No 1 (2023) |
Искусственный интеллект никогда не заменит полностью человека |
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|
Абрамов И.
|
| Vol 52, No 1 (2023) |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
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|
Яфаров Р., Шабунин Н.
|
| Vol 52, No 1 (2023) |
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He |
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|
Ефремов А., Kwon K.
|
| Vol 52, No 1 (2023) |
Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора |
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|
Локотко В., Васильевский И., Каргин Н.
|
| Vol 52, No 1 (2023) |
Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана |
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Мурин Д., Пивоваренок С., Чесноков И., Гогулев И.
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