Email this article Effect of rapid thermal annealing on the formation of aluminum-silicon and aluminum-polysilicon ohmic contacts in integrated microcircuits
- Authors: Zhyhulin D.V.1, Pilipenko V.A.1, Shestovski D.V.1
-
Affiliations:
- JSC “Integral” – “Integral” Holding Management Company
- Issue: Vol 54, No 4 (2025)
- Pages: 333-338
- Section: ТЕХНОЛОГИИ
- URL: https://journals.rcsi.science/0544-1269/article/view/309023
- DOI: https://doi.org/10.31857/S0544126925040076
- EDN: https://elibrary.ru/QHQGRQ
- ID: 309023
Cite item
Open Access
Access granted
Subscription Access
Abstract
The results of the study of the influence of thermal annealing on the formation of ohmic contacts of aluminum-silicon and aluminum-polysilicon at the stage of manufacturing modern integrated circuits are presented. It has been established that standard thermal annealing at a temperature of 450 oC for 20 min in nitrogen leads both to the dissolution of silicon in aluminum contacts with the subsequent formation of recrystallized islands of p-type silicon at the aluminum-silicon interface, and to the dissolution of polysilicon, with its subsequent release in the form of acute-angled clumping. When using rapid thermal annealing (Tmax = 450 oC, 7 s, N2), the formation of such conglomerates was not detected. The dissolution of polysilicon (silicon) in aluminum during the formation of aluminum-polysilicon (aluminum-silicon) ohmic contacts leads to a change in the value of the contact resistance of polysilicon resistors and the volt-ampere characteristics of bipolar transistors.
About the authors
D. V. Zhyhulin
JSC “Integral” – “Integral” Holding Management Company
Email: zhygulin@mail.ru
Kazinca str., 121А, Minsk 220108, Belarus
V. A. Pilipenko
JSC “Integral” – “Integral” Holding Management Company
Email: zhygulin@mail.ru
Kazinca str., 121А, Minsk 220108, Belarus
D. V. Shestovski
JSC “Integral” – “Integral” Holding Management Company
Author for correspondence.
Email: zhygulin@mail.ru
Kazinca str., 121А, Minsk 220108, Belarus
References
- Semiconductor Devices: Physics and Technology / ed.: S.M. Sze, M.-K. Lee. – 3th ed. – Hoboken, N.J: Wiley, 2012. – 592 p.
- Basic technological processes for manufacturing semiconductor devices and integrated microcircuits on silicon. Vol. 3 / Ed. by Turtsevich A.S. Minsk: Publishing house “Integralpoligraf”, 785 p.
- Franssila S. Introduction to microfabrication. – John Wiley and Sons, 2010. – 518 p.
- Pilipenko V.A. Fast heat treatments in VLSI technology. Minsk: Publishing center of BSU, 2004. 531 p.
- Pilipenko V.A., Kovalchuk N.S., Zhigulin D.V. Influence of long-term and rapid heat treatments on the formation of the aluminum-polysilicon interface // Journal of the Belarusian State University. Physics. 2023. No. 2. P. 51–57.
- Pilipenko V.A., Kovalchuk N.S., Zhigulin D.V., Shestovsky D.V., Anishchik V.M., Ponaryadov V.V. Mechanism of interaction of aluminum with polysilicon during the formation of ohmic contact by methods of long and rapid heat treatments // Journal of the Belarusian State University. Physics. 2024. No. 1. P. 42–48.
- Pilipenko V.A., Kovalchuk N.S., Shestovsky D.V., Zhigulin D.V. Energy-dispersive X-ray microanalysis as a method for studying the aluminum-polysilicon interface after exposure to long-term and rapid thermal annealing // Measurement devices and methods. 2024. Vol. 15. No. 2. P. 104–109. https://doi.org/10.21122/2220-9506-2024-15-2-104-109
Supplementary files
