Russian Microelectronics

We propose a model for quantum tomography protocols of ion-trap qudits that incorporates parameter-setting errors in measurement transformations. A comparative analysis of reconstruction accuracy under transformation uncertainty is conducted for both the conventional projective measurement approach and the fuzzy quantum measurement framework. The results demonstrate a substantial advantage of the fuzzy measurement model in the presence of transformation inaccuracies. Furthermore, the model enables the construction of a complete set of two-level unitary transformations applicable to qudit states.

Films of negative photoresists (PR) AZ nLOF2020 and AZ nLOF2070 with a thickness of ~ 6.0 microns deposited on the surface of silicon wafers by centrifugation have been studied using microindentation and IR Fourier spectroscopy methods. It is shown that after irradiation with light with λ = 404 nm for 106 s and subsequent drying at 115 °C for a duration of 60 s, a shift to the high-energy region of interference bands maxima is observed in the reflective- absorption spectra of photoresistive films. It is caused by a decrease in the thickness of the FR film due to evaporation of the solvent during the drying process. These processes occur more intensively in AZ nLOF2020 films, in which the interference bands shift was ~ 9%, while in AZ nLOF2070 films it did not reach 1%. It is shown that the absorption bands with maxima at 1070 and 1100 cm⁻¹, due to asymmetric and symmetrical valence vibrations of C-O-C bonds in aliphatic esters, and at 2940 cm⁻¹, due to asymmetric valence vibrations of CH₃ bonds, are associated with a solvent. It was found that the microhardness of the AZ nLOF20XX series films increases after stabilizing drying, which is due to the crosslinking of phenol-formaldehyde resin molecules – the basis of the photoresist. The resulting experimental data is explained taking into account the ordering of the structure of the photoresistive film near the PR/silicon interface due to the orientation of the molecules and the presence of AZ nLOF2020 films with a higher concentration of residual solvent.

Structural and memristive properties of layered Cu/PPX–PbTe/ITO samples based on parylene (poly-p-xylylene, PPX) with PbTe nanoparticles were studied. An unusual effect of light on the nature of resistive switching (RS) was discovered: in the high-resistance state the memristor conductivity increases under illumination, whereas in the low-resistance state negative photoconductivity (i.e., a noticeable decrease) is observed during cyclic RS. A qualitative model, that describes the switching mechanism under optical excitation and in its absence, is proposed. The characteristics of RS and the possibility of controlling them using illumination demonstrate the possibility of using hybrid PPX-memristors as sensory and synaptic elements in the development of neuromorphic computer vision systems.

A defining characteristic of microelectronic manufacturing is its exceptionally high standards for purity. These requirements apply to raw materials, final products, technological processes, equipment, and facilities. Such conditions are often achieved using aggressive reagents, necessitating equipment and tooling made from chemically resistant materials. Fluoropolymers (FPs) are a key class of materials that meet this need, with products made from them being integral to numerous microelectronic processes. For a long time, the necessary fluoropolymer products were imported. However, current sanctions have created an urgent need to establish their domestic production within the Russian Federation. Consequently, a thorough analysis of Russia’s fluoropolymer research and manufacturing capabilities is essential to address this challenge. The success of this endeavor will depend significantly on effective collaboration and mutual understanding between specialists in microelectronics and fluoropolymer materials – a central focus of this review. Particular attention is paid to products used for filtering aggressive reagents, purifying water and air, sampling and storing specimens, and conducting reactions with high-purity chemicals.

In the integral magneto-optical response of the three-layer structure Co(6 nm)/Ru(10 nm)/Co(10 nm)/Si (100) the contributions of various individual cobalt layers have been identified. A method has been developed and described that allows the magnetic properties of individual magnetic layers in three-layer systems to be analyzed based on the analysis of magneto-optical dependencies, identifying the directions of magnetic anisotropy. The developed method allowed us to establish that the properties of the magnetic anisotropy of cobalt films in a multilayer structure depend on the properties of the buffer layer and the substrate, the interactions at the interfaces, and the mechanical stresses as well as to determine the directions of the magnetic anisotropy axes in each layer.

The paper studies ferromagnetic films with strong uniaxial anisotropy of the “easy plane” type and substantiates that paired nano-sized perforations in such films can be used as memory cells for recording and storing data in the ternary number system. The problem of reading the state of cells of this type has been examined, and an approach to solving it has been proposed, which consists in measuring the response of the system to a picosecond pulse of an external magnetic field. The parameters of the system at which the magnitude of this response is greatest were obtained, and estimates of this value were made using both analytical and numerical methods.