Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films
- Authors: Tulina N.A.1, Rossolenko A.N.1, Borisenko I.Y.2, Ivanov A.A.3
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Affiliations:
- Osipyan Institute of Solid State Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
- National Research Nuclear University, Moscow Engineering Physics Institute (MEPhI)
- Issue: Vol 52, No 4 (2023)
- Pages: 315-321
- Section: ПРИБОРЫ
- URL: https://journals.rcsi.science/0544-1269/article/view/138574
- DOI: https://doi.org/10.31857/S0544126923700382
- EDN: https://elibrary.ru/WDVNXM
- ID: 138574
Cite item
Abstract
Pulse studies of transients in the effect of resistive switching in planar heterocontacts based on strongly correlated electronic systems are presented using the example of memristive transitions based on YBa2Cu3O7–δ. It is shown that the switching process is asymmetric with respect to switching to low-resistance and high-resistance metastable states; and switching times are regulated by the voltage level and can be less than microseconds; however, relaxation processes last several seconds. The ability to adjust switching times characterizes the plasticity of these devices as memory elements for neuromorphic applications. in spike neu-ral networks.
About the authors
N. A. Tulina
Osipyan Institute of Solid State Physics, Russian Academy of Sciences
Email: tulina@issp.ac.ru
Chernogolovka, Moscow Region, 142432 Russia
A. N. Rossolenko
Osipyan Institute of Solid State Physics, Russian Academy of Sciences
Email: tulina@issp.ac.ru
Chernogolovka, Moscow Region, 142432 Russia
I. Yu. Borisenko
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: tulina@issp.ac.ru
Chernogolovka, Moscow Region, 142432 Russia
A. A. Ivanov
National Research Nuclear University, Moscow Engineering Physics Institute (MEPhI)
Author for correspondence.
Email: tulina@issp.ac.ru
Moscow, 115409 Russia
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Supplementary files
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