Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs}  Superlattices on GaAs (100), (110), and (111)A Substrates

E. A.  Klimov; Климов Е. А.; S. S. Pushkarev; Пушкарёв С. С.; A. N. Klochkov; Клочков А. Н.; M. O. Mozhaeva; Можаева М. О.

doi:10.31857/S054412692370031X

Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates

Authors: Klimov E.A.¹^,2, Pushkarev S.S.¹, Klochkov A.N.³, Mozhaeva M.O.²
Affiliations:
1. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
2. State Scientific Center of the Russian Federation Joint Stock Company NPO “Orion,”
3. National Research Nuclear University “MEPhI,”
Issue: Vol 52, No 3 (2023)
Pages: 167-173
Section: ДИАГНОСТИКА
URL: https://journals.rcsi.science/0544-1269/article/view/138550
DOI: https://doi.org/10.31857/S054412692370031X
EDN: https://elibrary.ru/UDRWAA
ID: 138550

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Abstract
About the authors
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Abstract

The production of superlattices with pseudomorphically strained quantum wells (QWs) {InxGa1–xAs/GaAs} grown by molecular beam epitaxy on GaAs substrates with (100), (110), and (111)A crys-tallographic surface orientations is reported. The quality of the crystal structure of epitaxial samples is assessed using the atomic force microscopy of their surface. The manifestation of a piezoelectric field in the photoluminescence spectra is reported.

Keywords

atomic force microscopy, striated relief, molecular beam epitaxy, GaAs, InGaAs, (110), (111)A, pseudomorphic quantum well, piezoelectric effect, photoluminescence spectroscopy

About the authors

E. A. Klimov

Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences; State Scientific Center of the Russian Federation Joint Stock Company NPO “Orion,”

Email: s_s_e_r_p@mail.ru
Moscow, 117105 Russia; Moscow, 111538, Russia

S. S. Pushkarev

Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences

Email: s_s_e_r_p@mail.ru
Moscow, 117105 Russia

A. N. Klochkov

National Research Nuclear University “MEPhI,”

Email: s_s_e_r_p@mail.ru
Moscow, 115409 Russia

M. O. Mozhaeva

State Scientific Center of the Russian Federation Joint Stock Company NPO “Orion,”

Author for correspondence.
Email: s_s_e_r_p@mail.ru
Moscow, 111538, Russia

References

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