| Шығарылым |
Атауы |
Файл |
| Том 53, № 1 (2024) |
Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping |
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Golikov O., Kodochigov N., Obolensky S., Puzanov A., Tarasova E., Khazanova S.
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| Том 52, № 6 (2023) |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
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Altudov Y., Gaev D., Pskhu A., Rekhviashvili S.
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| Том 52, № 3 (2023) |
Fast Electrochemical Micropump for Portable Drug Delivery Module |
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Uvarov I., Shlepakov P., Abramychev A., Svetovoy V.
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| Том 52, № 4 (2023) |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
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Kuznetsova I., Savenko O., Romanov D.
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| Том 52, № 5 (2023) |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
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Novoselov A., Masalskii N.
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| Том 52, № 5 (2023) |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
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Mordvintsev V., Kudryavtsev S., Naumov V., Gorlachev E.
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| Том 52, № 4 (2023) |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
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Saenko A., Vakulov Z., Klimin V., Bilyk G., Malyukov S.
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| Том 53, № 2 (2024) |
Influence of nickel impurities on the operational parameters of a silicon solar cell |
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Kenzhaev Z., Zikrillaev N., Odzhaev V., Ismailov K., Prosolovich V., Zikrillaev K., Koveshnikov S.
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| Том 52, № 4 (2023) |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
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Koval’chuk N., Lastovskii S., Odzhaev V., Petlitskii A., Prosolovich V., Shestovsky D., Yavid V., Yankovskii Y.
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| Том 52, № 6 (2023) |
ВНИМАНИЮ АВТОРОВ |
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| Том 53, № 2 (2024) |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
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Khamzin E., Uslin D.
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| Том 52, № 5 (2023) |
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements |
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Prokaznikov A., Paporkov V., Chirikov V., Evseeva N.
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| Том 52, № 3 (2023) |
Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots |
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Tsukanov A., Kateev I.
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| Том 52, № 5 (2023) |
Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range |
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Zuev S., Lopatin A., Luchin V., Salashchenko N., Tsybin N., Chkhalo N.
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| Том 52, № 6 (2023) |
PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2 |
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Murin D., Chesnokov I., Gogulev I., Grishkov A.
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| Том 52, № 2 (2023) |
SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits |
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Novikov Y., Filippov M.
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| Том 52, № 1 (2023) |
Искусственный интеллект никогда не заменит полностью человека |
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Абрамов И.
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| Том 52, № 2 (2023) |
Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators |
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Tsukanov A., Kateev I.
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| Том 53, № 1 (2024) |
Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |
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Polyakova V., Saenko A., Kots I., Kovalev A.
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| Том 52, № 2 (2023) |
Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide |
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Kerimov E.
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| Том 52, № 4 (2023) |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation |
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Evstafieva M., Knyazev M., Korepanov V., Red’kin A., Roschupkin D., Yakimov E.
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| Том 52, № 1 (2023) |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
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Kerimov E.
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| Том 52, № 4 (2023) |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
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Glushko A., Morozov S., Chistyakov M.
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| Том 52, № 5 (2023) |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
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Sirotkin V.
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| Том 52, № 1 (2023) |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
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Яфаров Р., Шабунин Н.
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| Том 52, № 1 (2023) |
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy |
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Murin D., Chesnokov I., Pivovarenok S., Efremov A.
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| Том 52, № 4 (2023) |
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures |
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Efremov A., Bobylev A., Kwon K.
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| Том 53, № 1 (2024) |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
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Rogozhin A., Glaz O.
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| Том 52, № 4 (2023) |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
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Fadeev A., Myakon’kikh A., Smirnova E., Simakin S., Rudenko K.
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| Том 52, № 4 (2023) |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
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Tulina N., Rossolenko A., Borisenko I., Ivanov A.
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| Том 52, № 3 (2023) |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
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Asadov M., Mammadova S., Huseynova S., Mustafaeva S., Lukichev V.
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| Том 52, № 6 (2023) |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
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Pozdnyakov D., Borzdov A., Borzdov V.
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| Том 52, № 5 (2023) |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
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Makhviladze T., Sarychev M.
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| Том 52, № 1 (2023) |
Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2 |
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Asadov M., Mustafaeva S., Guseinova S., Lukichev V.
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| Том 53, № 2 (2024) |
Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
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Asadov S.
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| Том 52, № 4 (2023) |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
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Masalskii N.
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| Том 52, № 3 (2023) |
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
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Serov D., Khorin I.
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| Том 53, № 1 (2024) |
Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |
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Asadov M., Huseynova S., Mustafaeva S., Mammadova S., Lukichev V.
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| Том 53, № 1 (2024) |
Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |
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Asadov M., Mammadova S., Mustafaeva S., Huseynova S., Lukichev V.
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| Том 53, № 1 (2024) |
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |
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Ezhovskii Y., Mikhailovskii S.
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| Том 52, № 3 (2023) |
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates |
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Klimov E., Pushkarev S., Klochkov A., Mozhaeva M.
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| Том 52, № 6 (2023) |
MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE |
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Belozerov I., Uvarov I.
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| Том 52, № 5 (2023) |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
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Fetisenkova K., Rogozhin A.
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| Том 53, № 2 (2024) |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
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Chumakov A.
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| Том 52, № 5 (2023) |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma |
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Efremov A., Smirnov S., Betelin V.
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| Том 52, № 4 (2023) |
Single Event Displacement Effects in a VLSI |
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Chumakov A.
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| Том 52, № 2 (2023) |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
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Isaev A., Permyakova O., Rogozhin A.
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| Том 53, № 1 (2024) |
Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |
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Gorlachev E., Mordvintsev V., Kudryavtsev S.
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| Том 52, № 1 (2023) |
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He |
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Ефремов А., Kwon K.
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| Том 53, № 1 (2024) |
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |
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Miakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
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| Том 52, № 2 (2023) |
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture |
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Efremov A., Betelin V., Kwon K.
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| Том 53, № 1 (2024) |
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
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Golikov O., Zabavichev I., Ivanov A., Obolensky S., Obolenskaya E., Paveliev D., Potekhin A., Puzanov A., Tarasova E., Khazanova S.
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| Том 52, № 3 (2023) |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
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Polushkin E., Nefed’ev S., Koval’chuk A., Soltanovich O., Shapoval S.
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| Том 52, № 3 (2023) |
Precise Tomography of Qudits |
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Bogdanov Y., Bogdanova N., Kuznetsov Y., Koksharov K., Lukichev V.
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| Том 53, № 2 (2024) |
Application of the finite element method for calculating the surface acoustic wave parameters and devices |
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Koigerov A.
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| Том 53, № 1 (2024) |
Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology |
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Gaidukasov R., Miakonkikh A.
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| Том 52, № 6 (2023) |
Design of integrated voltage multipliers using standard CMOS technologies |
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Sinyukin A., Konoplev B., Kovalev A.
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| Том 52, № 6 (2023) |
Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |
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Baranov M., Karseeva E., Tsybin O.
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| Том 53, № 2 (2024) |
Ripple of a DC/DC converter based on SEPIC topology |
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Bityukov V., Lavrenov A.
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| Том 52, № 1 (2023) |
Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора |
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Локотко В., Васильевский И., Каргин Н.
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| Том 52, № 3 (2023) |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
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Tsunvaza D., Ryzhuk R., Vasil’evskii I., Kargin N., Klokov V.
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| Том 52, № 1 (2023) |
Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |
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Zavitaev E., Rusakov O., Chukhleb E.
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| Том 52, № 6 (2023) |
Performance calculation for a MEMS switch with «floating» electrode |
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Morozov M., Uvarov I.
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| Том 52, № 2 (2023) |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
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Rogozhin A., Sidorov F.
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| Том 53, № 1 (2024) |
Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses |
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Nefedov D., Shabunin N., Bratashov D.
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| Том 53, № 2 (2024) |
Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters |
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Lomov A., Seredin B., Martyushov S., Tatarintsev A., Popov V., Malibashev A.
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| Том 52, № 4 (2023) |
Tomography of Detectors Taking Dead Time into Account |
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Bogdanov Y., Katamadze K., Borshchevskaya N., Avosopiants G., Bogdanova N., Kulik S., Lukichev V.
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| Том 52, № 6 (2023) |
Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |
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Kovalchuk N., Lastovsky S., Odzhaev V., Petlitsky A., Prosolovich V., Shestovsky D., Yavid V., Yankovsky Y.
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| Том 52, № 5 (2023) |
Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane |
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Murin D., Chesnokov I., Gogulev I., Grishkov A.
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| Том 52, № 1 (2023) |
Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана |
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Мурин Д., Пивоваренок С., Чесноков И., Гогулев И.
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| Нәтижелер 70 - 1/70 |
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