Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures

Cover Page

Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The processes of electroforming and functioning in a vacuum of memristors (elements of non-volatile electrically reprogrammable memory) based on open TiN–SiO2–Mo sandwich structures were studied. The experimental results showed that, firstly, these structures with a top molybdenum electrode are characterized by higher initial conductivity values than the previously studied TiN–SiO2–W structures. Secondly, for structures with Mo it turned out to be possible to reduce the electroforming voltage to values of 6–8 V, which is almost two times lower than for structures with W under the same experimental conditions. This increases the reliability of the functioning of memory elements, minimizing the likelihood of breakdown. Experiments with preliminary thermal annealing of open TiN–SiO2–Mo sandwich structures in an oil-free vacuum showed that the structures retained high initial conductivity, but did not undergo full electroforming. Based on the results obtained, a mechanism for the appearance of high built-in conductivity for open TiN–SiO2–Mo sandwich structures was proposed, which is based on the transfer of molybdenum atoms through the etchant to the open edge of SiO2 during its fabrication.

About the authors

E. S. Gorlachev

Yaroslavl Branch of the Valiev Institute of Physics and Technology, Russian Academy of Sciences

Author for correspondence.
Email: egorlachev@yandex.ru
Russian Federation, Yaroslavl

V. M. Mordvintsev

Yaroslavl Branch of the Valiev Institute of Physics and Technology, Russian Academy of Sciences

Email: egorlachev@yandex.ru
Russian Federation, Yaroslavl

S. E. Kudryavtsev

Yaroslavl Branch of the Valiev Institute of Physics and Technology, Russian Academy of Sciences

Email: egorlachev@yandex.ru
Russian Federation, Yaroslavl

References

  1. Chua L. Resistance switching memories are memristors // Appl. Phys. A. 2011. V. 102. P. 765–783.
  2. Yang J.J., Strukov D.B., Stewart D.R. Memristive devices for computing // Nat. Nanotechnol. 2013. V. 8. P. 13–24.
  3. Abunahla H., Mohammad B. Memristor Device Overview. In: Memristor Technology: Synthesis and Modeling for Sensing and Security Applications. Analog Circuits and Signal Processing. Cham: Springer, 2018. 106 p.
  4. Fadeev A.V., Rudenko K.V. To the issue of the memristor’s HRS and LRS states degradation and data retention time // Russ. Microelectron. 2021. V. 50. No. 5. P. 311–325.
  5. Sung C., Hwang H., Yoo I.K. Perspective: A review on memristive hardware for neuromorphic computation // J. Appl. Phys. 2018. V. 124. P. 151903–1–13.
  6. Ielmini D., Wang Z., Liu Y. Brain-inspired computing via memory device physics // APL Mater. 2021. V. 9. P. 050702–1–21.
  7. Huang Y., Kiani F., Ye F., Xia Q. From memristive devices to neuromorphic systems // Appl. Phys. Lett. 2023. V. 122. P. 110501–1–8.
  8. Kumar D., Aluguri R., Chand U., Tseng T.Y. Metal oxide resistive switching memory: Materials, properties and switching mechanisms // Ceram. Int. 2017. V. 43. P. S547—S556.
  9. Prasad O.K., Chandrasekaran S., Chung C.-H., Chang K.-M., Simanjuntak F.M. Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing // Appl. Phys. Lett. 2022. V. 121. P. 233505–1–6.
  10. Koroleva A.A., Kuzmichev D.S., Kozodaev M.G., Zabrosaev I.V., Korostylev E.V., Markeev A.M. CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems // Appl. Phys. Lett. 2023. V. 122. P. 022905-1-7.
  11. Isaev A.G., Permyakova O.O., Rogozhin A.E. Oxide memristors for ReRAM: Approaches, characteristics, and structures // Russ. Microelectron. 2023. V. 52. No. 2. P. 74–98.
  12. Liu P., Luo H., Yin X., Wang X., He X., Zhu J., Xue H., Mao W., Pu Y. A memristor based on two-dimensional MoSe2/MoS2 heterojunction for synaptic device application // Appl. Phys. Lett. 2022. V. 121. P. 233501-1-7.
  13. Wang Y., Chen Y.-T., Xue F., Zhou F., Chang Y.-F., Fowler B., Lee J.C. Memory switching properties of e-beam evaporated SiOx on N++ Si substrate // Appl. Phys. Lett. 2012. V. 100. P. 083502-1-3.
  14. Zakharov P.S., Ital’yantsev A.G. Effect of switching of electric conductivity in metal-dielectric structures based on nonstoichiometric silicon oxide // Tr. Mosk. Fiz.-Tekh. Inst. 2015. V. 7. No. 2. P. 113–118.
  15. Tikhov S.V., Gorshkov O.N., Antonov I.N., Kasatkin A.P., Korolev D.S., Belov A.I., Mikhaylov A.N., Tetel’baum D.I. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiOx // Tech. Phys. 2016. V. 61. No. 5. P. 745–749.
  16. Mehonic A., Shluger A.L., Gao D., Valov I., Miranda E., Ielmini D., Bricalli A., Ambrosi E., Li C., Yang J.J., Xia Q., Kenyon A.J. Silicon oxide (SiOx): A promising material for resistance switching? // Adv. Mater. 2018. P. 1801187–1–21.
  17. Wen X., Tang W., Lin Z., Peng X., Tang Z., Hou L. Solution-processed small-molecular organic memristor with a very low resistive switching set voltage of 0.38 V // Appl. Phys. Lett. 2023. V. 122. P. 173301–1–6.
  18. Mordvintsev V.M., Kudryavtsev S.E., Levin V.I. Electroforming as a process in the self-formation of conducting nanostructures for the nonvolatile electrically reprogrammable memory elements // Nanotechnol. Russia. 2009. V. 4. No. 1–2. P. 121–128.
  19. Mordvintsev V.M., Kudryavtsev S.E., Levin V.I. High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures // Nanotechnol. Russia. 2009. V. 4. No. 1–2. P. 129–136.
  20. Mordvintsev V.M., Kudryavtsev S.E. Investigation of electrical characteristics of memory cells based on self-forming conducting nanostructures in a form of the TiN–SiO2–W open sandwich structure // Russ. Microelectron. 2013. V. 42. No. 2. P. 68–78.
  21. Mordvintsev V.M., Gorlachev E.S., Kudryavtsev S.E., Levin V.L. Influence of oxygen pressure on switching in memoristors based on electromoformed open sandwich structures // Russ. Microelectron. 2020. V. 49. No. 4. P. 269–277.
  22. Mordvintsev V.M., Gorlachev E.S., Kudryavtsev S.E. Effect of the electroformation conditions on the switching stability of memristors based on open “sandwich” structures in an oxygen medium // Russ. Microelectron. 2021. V. 50. No. 3. P. 146–154.
  23. Mordvintsev V.M., Gorlachev E.S., Kudryavtsev S.E. A mechanism for the formation of a conducting medium in memristers based on electroformed open sandwich MDM structures // Russ. Microelectron. 2022. V. 51. No. 4. P. 255–263.
  24. Mordvintsev V.M., Kudryavtsev S.E., Naumov V.V., Gorlachev E.S. Effect of the material of electrodes on electroformation and properties of memristors based on open metal — SiO2—metal sandwich structures // Russ. Microelectron. 2023. V. 52. No. 5. P. 419–428.
  25. Mott N.F., Davis E.A. Electronic Processes in Non-Crystalline Materials. Oxford: Clarendon Press, 1971; Translated into Russian: Moscow: Mir, 1974.

Supplementary files

Supplementary Files
Action
1. JATS XML
Download
2. Fig. 1. Schematic representation of open "sandwich"-MDM-structure after electroforming: 1 - lower electrode (TiN); 2 - dielectric (SiO2) with thickness about 20 nm; 3 - upper electrode (cathode) (Mo, W, TiN); 4 - conducting nanostructure; 5 - insulating gap with variable width h ≈ 1 nm

Download (110KB)
Indexing metadata
3. Fig. 2. Typical VAC of the open "sandwich" structure TiN-SiO2-Mo when a triangular pulse with the amplitude of 10 V is applied: a - initial "on" state; b - successful electroforming of the same structure after its switching off by a short pulse with the amplitude of 8 V; c - after working up of the structure by a pulse with the amplitude of 10 V

Download (183KB)
Indexing metadata
4. Fig. 3. Typical VAC of the electroforming process of an open TiN-SiO2-Mo "sandwich" structure in the absence of the initial "on" state and the triangular pulse amplitude of 10 V

Download (82KB)
Indexing metadata
5. Fig. 4. Typical VAC of an open TiN-SiO2-Mo sandwich structure after annealing in a high oil-free vacuum of 200°C for 60 min and turning it off with a short voltage pulse of 9 V amplitude

Download (78KB)
Indexing metadata
6. Fig. 5. Typical VAC of the electroforming process of an open TiN-SiO2-Mo sandwich structure at a triangular pulse amplitude of 8 V

Download (77KB)
Indexing metadata
7. Fig. 6. Voltampere characteristic of the electroforming process of the open "sandwich" structure TiN-SiO2-Mo at the triangular pulse amplitude of 6 V

Download (67KB)
Indexing metadata

Copyright (c) 2024 Russian Academy of Sciences

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies