A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure - PDF (Russian)
Copyright (c) 2023 В.В. Сироткин
Copyright (c) 2023 В.В. Сироткин
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Keywords
Förster effect
bipolar transistor
charge qubit
diagnostics
dissociation
etching
fluorine atoms
ionization
kinetics
magnetron sputtering
mechanical stress
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
resistive switching
silicon
specific power
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Keywords
Förster effect
bipolar transistor
charge qubit
diagnostics
dissociation
etching
fluorine atoms
ionization
kinetics
magnetron sputtering
mechanical stress
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
resistive switching
silicon
specific power
Article Tools
Email this article (Login required)
Email the author (Login required)
Email this article (Login required)
Email the author (Login required) Copyright (c) 2023 В.В. Сироткин