Email this article The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits
- Authors: Chumakov A.I.1
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Affiliations:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow JSC Specialized Electronic Systems
- Issue: Vol 53, No 2 (2024)
- Pages: 156-161
- Section: МОДЕЛИРОВАНИЕ
- URL: https://journals.rcsi.science/0544-1269/article/view/262706
- DOI: https://doi.org/10.31857/S0544126924020047
- ID: 262706
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Abstract
The model is proposed to explain the effects of low dose rate under the radiation influence in bipolar structures, taking into account the effects of subthreshold displacement in high-doped silicon layers. The base current degradation of bipolar transistor is determined of surface and displacement radiation effects in the near-surface base area. The conditions for the enhanced low dose rate sensitivity (ELDRS) in bipolar structures are shown. The presented results of the analysis allow us to explain most of the observed experimental results.
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About the authors
A. I. Chumakov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow JSC Specialized Electronic Systems
Author for correspondence.
Email: aichum@spels.ru
Russian Federation, Moscow
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