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Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping
- Authors: Golikov O.L.1, Kodochigov N.E.1, Obolensky S.V.1, Puzanov A.S.1, Tarasova E.A.1, Khazanova S.V.1
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Affiliations:
- Lobachevsky Nizhny Novgorod State University
- Issue: Vol 53, No 1 (2024)
- Pages: 3-7
- Section: ДИАГНОСТИКА
- URL: https://journals.rcsi.science/0544-1269/article/view/259575
- DOI: https://doi.org/10.31857/S0544126924010017
- ID: 259575
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Abstract
The paper presents the results of studies of C–V characteristics of GaAs/In0.53Ga0.47As HEMT before and after neutron irradiation with a fluence of (6.3 ± 1.3) × 1014 cm–2. Based on the experimentally obtained characteristics, the effective electron distribution profiles of the structure were calculated before and after radiation impact. The effect of radiation defects on the δ-layers of the structure was analyzed.
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About the authors
O. L. Golikov
Lobachevsky Nizhny Novgorod State University
Email: tarasova@rf.unn.ru
Russian Federation, Nizhny Novgorod
N. E. Kodochigov
Lobachevsky Nizhny Novgorod State University
Email: tarasova@rf.unn.ru
Russian Federation, Nizhny Novgorod
S. V. Obolensky
Lobachevsky Nizhny Novgorod State University
Email: tarasova@rf.unn.ru
Russian Federation, Nizhny Novgorod
A. S. Puzanov
Lobachevsky Nizhny Novgorod State University
Email: tarasova@rf.unn.ru
Russian Federation, Nizhny Novgorod
E. A. Tarasova
Lobachevsky Nizhny Novgorod State University
Author for correspondence.
Email: tarasova@rf.unn.ru
Russian Federation, Nizhny Novgorod
S. V. Khazanova
Lobachevsky Nizhny Novgorod State University
Email: tarasova@rf.unn.ru
Russian Federation, Nizhny Novgorod
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