Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology

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Abstract

The article reviews model-based and model-free approaches to solving problems of spectral ellipsometry related to the measurement of thicknesses and optical parameters of thin layers of dielectrics, metals and semiconductors in microelectronics application. Model-based approaches employ a priori information about the dispersion relation in form of the Cauchy, Drude, Drude—Lorentz and Tautz—Lorentz. Model-free approaches can use any smooth multivariate functional dependence describing a smooth spectral curve. Also, machine learning can be used to implement the model-free approach, which is well suited for determining the thickness of multilayer structures and their optical characteristics and allows to significantly increase the speed of data processing.

About the authors

R. A. Gaidukasov

Valiev Institute of Physics and Technology of Russian Academy of Sciences

Author for correspondence.
Email: gaydukasov.r@gmail.com
Russian Federation, Moscow

A. V. Miakonkikh

Valiev Institute of Physics and Technology of Russian Academy of Sciences

Email: gaydukasov.r@gmail.com
Russian Federation, Moscow

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Supplementary files

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2. Fig. 1. Schematic diagram of the experimental setup for spectral ellipsometry. Linearly polarized light falls on the sample with the angle of incidence φ

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3. Fig. 2. Real and imaginary parts of the Lorentz oscillator with center E0 = 3, width G = 0.5 and oscillator force A = 25

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4. Fig. 3. Real and imaginary parts of the Tautz-Lorentz oscillator with center E0 = 3, width G = 0.5, amplitude A = 25 and optical energy of the forbidden zone Eg = 2

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